Part Number |
2SK2826-S |
Manufacturers |
NEC |
Logo |
|
Description |
SWITCHING N-CHANNEL POWER MOSFET |
Datasheet |
2SK2826-S Datasheet (PDF) |
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2826
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
ORDERING INFORMATION
PART NUMBER 2SK2826 2SK2826-S 2SK2826-ZJ PACKAGE TO-220AB TO-262 TO-263
DESCRIPTION
This product is N-Channel MOS Field Effect Transistor designed for high current switching applications.
FEATURES
• Super Low On-State Resistance RDS(on)1 = 6.5 mΩ (MAX.) (VGS = 10 V, ID = 35 A) RDS(on)2 = 9.7 mΩ (MAX.) (VGS = 4.0 V, ID = 35 A) • Low Ciss : Ciss = 7200 pF (TYP.) • Built-in Gate Protection Diode
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current (Pulse)
Note1
VDSS VGSS(AC) VGSS(DC) ID(DC) ID(pulse) PT PT Tch Tstg
60 ±20 +20, –10 ±70 ±280 100 1.5 150 –55 to + 150 70 490
V V V A A W W °C °C A mJ
Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalan.