Part Number |
2SK2828 |
Manufacturers |
Hitachi Semiconductor |
Logo |
|
Description |
Silicon N-Channel MOSFET |
Datasheet |
2SK2828 Datasheet (PDF) |
2SK2828
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-514 C (Z) 4th. Edition Feb 1999 Features
• • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC–DC converter Avalanche ratings
Outline
TO–3P
D 2
1 G
1
3 S
2
3
1. Gate 2. Drain (Flange) 3. Source
2SK2828
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg
2 1
Ratings 700 ±30 12 48 12 175 150 –55 to +150
Unit V V A A A W °C °C
2
2SK2828
Electrical Characteristics (Ta = 25°C)
Item Symbol Min 700 ±30 — — 2.0 — 5.5 — — — — — — — — — — — — Typ — — — — — 0.9 9.0 1850 400 45 35 8 10 25 65 140 55 0.95 2.5 Max — — ±10 100 3.0 1.2 — — — — — — — — — — — — — Unit V V.