2SK2835

2SK2835 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) 2SK2835 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm l Low drain−source ON resistance : RDS (ON) = 0.56 Ω (typ.) l High forward transfer admittance : |Yfs| = 4.5 S (typ.) l Low leakage current : IDSS = 100 µA (max) (VDS = 200 V) l Enhancement−mode : Vth = 1.5~3.5 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25°C) Characteristics Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC (Note 1) Pulse (Note 1) Drain power dissipation Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 200 200 ±20 5 20 1.3 65 5 0.13 150 −55~150 Unit V V V A W mJ A mJ °C °C JEDEC — JEITA — TOSHIBA 2-8M1B Weight: 0.54 g (typ.) Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to ambient Rth (ch−a) 96.1 °C / W Note 1: Please use devices on condition that the channel temperature is below 150°C. Note 2: VDD = 50 V, Tch = 25°C (initial), L = 4.2 mH, RG = 25 Ω, IAR = 5 A Note 3: Repetitive rating: Pulse width limited by maximum channel temperature This transistor is an electrostatic sensitive device. Please handle with caution. 1 2002-08-09 Electrical Characteristics (Ta = 25°C) 2SK2835 Characteristics Symbol Test Condition Gate leakage current D...