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2SK2844 Dataheets PDF



Part Number 2SK2844
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description N-Channel MOSFET
Datasheet 2SK2844 Datasheet2SK2844 Datasheet (PDF)

2SK2844 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2−π−MOSV) 2SK2844 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm z 4-V gate drive z Low drain−source ON resistance : RDS (ON) = 16 mΩ (typ.) z High forward transfer admittance : |Yfs| = 26 S (typ.) z Low leakage current : IDSS = 100 μA (max) (VDS = 30 V) z Enhancement mode : Vth = 0.8~2.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain−so.

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2SK2844 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2−π−MOSV) 2SK2844 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm z 4-V gate drive z Low drain−source ON resistance : RDS (ON) = 16 mΩ (typ.) z High forward transfer admittance : |Yfs| = 26 S (typ.) z Low leakage current : IDSS = 100 μA (max) (VDS = 30 V) z Enhancement mode : Vth = 0.8~2.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC (Note 1) Pulse (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg 30 30 ±20 35 140 60 259 35 6 150 −55~150 V V V A A W mJ A mJ °C °C JEDEC TO-220AB JEITA SC-46 TOSHIBA 2-10P1B Weight: 2.0 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to case Thermal resistance, channel to ambient Rth (ch−c) Rth (ch−a) 2.08 °C / W 83.3 °C / W Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: VDD = 25 V, Tch = 25°C (initial), L = 152 μH, RG = 25 Ω, IAR = 35 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Please handle with caution. 1 2006-11-16 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Gate leakage current Drain cut−off current Drain−source breakdown voltage Gate threshold voltage Drain−source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance IGSS IDSS V (BR) DSS Vth RDS (ON) |Yfs| Ciss Crss Coss VGS = ±16 V, VDS = 0 V VDS = 30 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 4 V, ID = 18 A VGS = 10 V, ID = 18 A VDS = 10 V, ID = 18 A VDS = 10 V, VGS = 0 V, f = 1 MHz Rise time tr 2SK2844 Min Typ. Max Unit — — ±10 μA — — 100 μA 30 — — V 0.8 — 2.0 V — 26 35 mΩ 16 20 13 26 — S — 980 — — 270 — pF — 580 — — 14 — Switching time Turn−on time Fall time ton tf — 23 — ns — 64 — Turn−off time Total gate charge (gate−source plus gate−drain) Gate−source charge Gate−drain (“miller”) Charge toff Qg Qgs VDD ≈ 24 V, VGS = 10 V, ID = 35 A Qgd — 190 — — 40 — — 32 — —8— nC Source−Drain Ratings and Characteristics (Ta = 25°C) Characteristics Continuous drain reverse current (Note 1) Pulse drain reverse current (Note 1) Forward voltage (diode) Reverse recovery time Reverse recovery charge Symbol IDR IDRP VDSF trr Qrr Test Condition Min —— — IDR = 35 A, VGS = 0 V IDR = 35 A, VGS = 0 V, dIDR / dt = 50 A / μs — — — — Typ. Max Unit — 50 A — 200 — −1.7 120 — 180 — A V ns nC Marking K2844 Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2006-11-16 2SK2844 3 2006-11-16 2SK2844 4 2006-11-16 2SK2844 RG = 25 Ω VDD = 25 V, L = 152 μH EAS = 1 2 ⋅ L ⋅ I2 ⋅ ⎜⎛ ⎝ BVDSS BVDSS − VDD ⎟⎞ ⎠ 5 2006-11-16 2SK2844 RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 20070701-EN • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).The.


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