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Part Number 2SK2845
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description N-Channel MOSFET
Datasheet 2SK2845 Datasheet2SK2845 Datasheet (PDF)

  2SK2845   2SK2845
2SK2845 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π−MOSIII) 2SK2845 Chopper Regulator, DC/DC Converter and Motor Drive Applications z Low drain-source ON-resistance : RDS (ON) = 8.0 Ω (typ.) z High forward transfer admittance : |Yfs| = 0.9 S (typ.) z Low leakage current : IDSS = 100 μA (max) (VDS = 720 V) z Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1) Pulse (Note 1) Drain power dissipation (Tc = 25°C) Single-pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg 900 900 ±30 1 3 40 324 1 4.0 150 −55 to 150 V V V A W mJ A mJ °C °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the .



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