Part Number |
2SK2845 |
Manufacturers |
Toshiba Semiconductor |
Logo |
|
Description |
N-Channel MOSFET |
Datasheet |
2SK2845 Datasheet (PDF) |
2SK2845
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π−MOSIII)
2SK2845
Chopper Regulator, DC/DC Converter and Motor Drive Applications
z Low drain-source ON-resistance
: RDS (ON) = 8.0 Ω (typ.)
z High forward transfer admittance
: |Yfs| = 0.9 S (typ.)
z Low leakage current : IDSS = 100 μA (max) (VDS = 720 V)
z Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage
Drain current
DC (Note 1) Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single-pulse avalanche energy (Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
VDSS VDGR VGSS
ID IDP PD
EAS
IAR EAR Tch Tstg
900 900 ±30
1 3 40
324
1 4.0 150 −55 to 150
V V V
A
W mJ A mJ °C °C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the .