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2SK2846 Dataheets PDF



Part Number 2SK2846
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description N-Channel MOSFET
Datasheet 2SK2846 Datasheet2SK2846 Datasheet (PDF)

2SK2846 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2−π−MOSV) 2SK2846 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm z Low drain−source ON resistance : RDS (ON) = 4.2 Ω (typ.) z High forward transfer admittance : |Yfs| = 1.7 S (typ.) z Low leakage current : IDSS = 100 μA (max) (VDS = 600 V) z Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain−source .

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2SK2846 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2−π−MOSV) 2SK2846 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm z Low drain−source ON resistance : RDS (ON) = 4.2 Ω (typ.) z High forward transfer admittance : |Yfs| = 1.7 S (typ.) z Low leakage current : IDSS = 100 μA (max) (VDS = 600 V) z Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage DC (Note 1) Drain current Pulse (t = 1 ms) (Note 1) Pulse (t = 100 μs) (Note 1) Drain power dissipation Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range VDSS VDGR VGSS ID IDP IDP PD EAS IAR EAR Tch Tstg 600 600 ±30 2 5 8 1.3 93 2 0.13 150 −55 to 150 V V V A A A W mJ A mJ °C °C JEDEC — JEITA — TOSHIBA 2-8M1B Weight: 0.54 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to ambient Rth (ch−a) 96.1 °C / W Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: VDD = 90 V, Tch = 25°C (initial), L = 41 mH, RG = 25 Ω, IAR = 2 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Please handle with caution. 1 2009-09-29 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Gate leakage current Gate−source breakdown voltage Drain cut−off current Drain−source breakdown voltage Gate threshold voltage Drain−source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance IGSS V (BR) GSS IDSS V (BR) DSS Vth RDS (ON) |Yfs| Ciss Crss Coss VGS = ±25 V, VDS = 0 V ID = ±10 μA, VGS = 0 V VDS = 600 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 1 A VDS = 10 V, ID = 1 A VDS = 10 V, VGS = 0 V, f = 1 MHz Rise time tr Switching time Turn−on time Fall time ton tf Turn−off time Total gate charge (gate−source plus gate−drain) Gate−source charge Gate−drain (“miller”) Charge toff Qg Qgs VDD ≈ 480 V, VGS = 10 V, ID = 2 A Qgd Source−Drain Ratings and Characteristics (Ta = 25°C) Characteristics Continuous drain reverse current (Note 1) Pulse drain reverse current (No.


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