2SK2857

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2857 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING DESCRIPTION The 2SK2857 is a switching device which can be driven directly by a 5V power source. The 2SK2857 features a low on-state resistance and excellent Switching Characteristics, and is suitable for applications such as actuator driver. FEATURES Can be driven by a 5V power source. Low On-state resistance : RDS(on)1 = 220 mΩ MAX. (VGS = 4 V, ID = 1.5 A) RDS(on)2 = 150 mΩ MAX. (VGS = 10 V, ID = 2.5 A) PACKAGE DRAWING (Unit : mm) 0.8MIN. 2.5±0.1 4.0±0.25 4.5±0.1 1.6±0.2 1 23 1.5±0.1 Electrode Connection 1.Souce 2.Drain 3.Gate 0.42 0.42±0.06 ±0.06 1.5 0.47 ±0.06 3.0 0.41+0.03 -0.05 Marking : NX ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Drain to Source Voltage VDSS 60 Gate to Source Voltage VGSS ±20 Drain Current (DC) Drain Current (pulse) Note1 Total Power Dissipation Note2 ID(DC) ID(pulse) PT ±4 ±16 2 Channel Temperature Tch 150 Storage Temperature Tstg −55 to +150 V V A A W °C °C Notes1. PW ≤ 10 µs, Duty Cycle ≤ 1 % 2. Mounted on ceramic board of 16 cm2 × 0.7 mm EQUIVALENT CIRCUIT Drain Gate Internal Diode Gate Protection Diode Source Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device is actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. The information in this docu...