2SK2864 Silicon MOSFET Datasheet

2SK2864 Datasheet, PDF, Equivalent


Part Number

2SK2864

Description

N-Channel Silicon MOSFET

Manufacture

Sanyo Semicon Device

Total Page 4 Pages
Datasheet
Download 2SK2864 Datasheet


2SK2864
Ordering number : ENN6610
2SK2864
N-Channel Silicon MOSFET
2SK2864
Ultrahigh-Speed Switching Applications
Features
Package Dimensions
Low ON-resistance.
Ultrahigh-speed switching.
Enables simplified fabrication, high-density mounting,
and miniaturization in end products due to the surface
mountable package.
unit : mm
2128
8.2
7.8
6.2
3
[2SK2864]
0.6
12
1.0 1.0
2.54 2.54
5.08
10.0
6.0
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Electrical Characteristics at Ta=25°C
Conditions
PW10µs, duty cycle1%
Tc=25°C
Parameter
Symbol
Conditions
Drain-to-Source Breakdown Voltage
Gate-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
V(BR)DSS
V(BR)GSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)
ID=1mA, VGS=0
IG=±100µA, VDS=0
VDS=200V, VGS=0
VGS=±16V, VDS=0
VDS=10V, ID=1mA
VDS=10V, ID=10A
ID=10A, VGS=10V
0.3
0.6
1 : Gate
7.8 2 : Source
3 : Drain
SANYO : ZP
Ratings
200
±20
20
80
50
150
--55 to +150
Unit
V
V
A
A
W
°C
°C
min
200
±20
2.0
6
Ratings
typ
max
Unit
V
V
100 µA
±10 µA
4.0 V
10 S
90 120 m
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
13001 TS IM TA-3092 No.6610-1/4

2SK2864
2SK2864
Continued from preceding page.
Parameter
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Diode Forward Voltage
Gate resistance
Switching Time Test Circuit
Symbol
Ciss1
Ciss2
Coss
Crss
td(on)
tr
td(off)
tf
VSD
Rg
Conditions
VDS=0, f=1MHz
VDS=20V, f=1MHz
VDS=20V, f=1MHz
VDS=20V, f=1MHz
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
IS=20A, VGS=0
f=1MHz
VIN
10V
0V
PW=10µs
D.C.1%
VIN
G
VDD=100V
ID=10A
RL=10
D VOUT
P.G 50
S 2SK2864
min
1.0
Ratings
typ
3000
1700
400
150
28
85
130
90
1.0
2.0
max
3800
2150
420
185
35
110
165
105
1.5
3.0
Unit
pF
pF
pF
pF
ns
ns
ns
ns
V
ID -- VDS
20
18
5V
16
14
12
10
8
6
4 VGS=4V
2
0
012345
Drain-to-Source Voltage, VDS -- V IT01918
RDS(on) -- VGS
200
Tc=25°C
180 ID=10A
160
140
120
100
80
60
40
0 2 4 6 8 10 12 14 16
Gate-to-Source Voltage, VGS -- V IT01920
ID -- VGS
20
VDS=10V
18
16
14
12
10
8
6
4
2
0
01 234 56 78
Gate-to-Source Voltage, VGS -- V IT01919
RDS(on) -- Tc
250
VGS=10V
ID=10A
200
150
100
50
0
--60 --40 --20
0 20 40 60 80 100 120 140 160
Case Temperature, Tc -- °C
IT01921
No.6610-2/4


Features Ordering number : ENN6610 2SK2864 N-Cha nnel Silicon MOSFET 2SK2864 Ultrahigh- Speed Switching Applications Features • • Package Dimensions 0.4 0.2 Low ON-resistance. unit : mm Ultrahig h-speed switching. 2128 Enables simplif ied fabrication, high-density mounting, and miniaturization in end products du e to the surface mountable package. [2 SK2864] 8.2 7.8 6.2 3 8.4 10.0 0.6 4. 2 1.2 1.0 2.54 1 2 1.0 2.54 6.2 5. 2 0.3 0.6 7.8 5.08 10.0 6.0 2.5 0.7 1 : Gate 2 : Source 3 : Drain SANYO : ZP Specifications Absolute Maximum Rat ings at Ta=25°C Parameter Drain-to-Sou rce Voltage Gate-to-Source Voltage Drai n Current (DC) Drain Current (Pulse) Al lowable Power Dissipation Channel Tempe rature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, dut y cycle≤1% Tc=25°C Conditions Rating s Unit 200 ±20 20 80 50 150 V V A A W °C °C --55 to +150 Electrical Char acteristics at Ta=25°C Parameter Drain -to-Source Breakdown Voltage Gate-to-Source Breakdown Voltage Zero-Gate Voltage .
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