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2SK2864 Dataheets PDF



Part Number 2SK2864
Manufacturers Sanyo Semicon Device
Logo Sanyo Semicon Device
Description N-Channel MOSFET
Datasheet 2SK2864 Datasheet2SK2864 Datasheet (PDF)

Ordering number : ENN6610 2SK2864 N-Channel Silicon MOSFET 2SK2864 Ultrahigh-Speed Switching Applications Features • • • Package Dimensions 0.4 0.2 Low ON-resistance. unit : mm Ultrahigh-speed switching. 2128 Enables simplified fabrication, high-density mounting, and miniaturization in end products due to the surface mountable package. [2SK2864] 8.2 7.8 6.2 3 8.4 10.0 0.6 4.2 1.2 1.0 2.54 1 2 1.0 2.54 6.2 5.2 0.3 0.6 7.8 5.08 10.0 6.0 2.5 0.7 1 : Gate 2 : Source 3 : Drain SANYO .

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Ordering number : ENN6610 2SK2864 N-Channel Silicon MOSFET 2SK2864 Ultrahigh-Speed Switching Applications Features • • • Package Dimensions 0.4 0.2 Low ON-resistance. unit : mm Ultrahigh-speed switching. 2128 Enables simplified fabrication, high-density mounting, and miniaturization in end products due to the surface mountable package. [2SK2864] 8.2 7.8 6.2 3 8.4 10.0 0.6 4.2 1.2 1.0 2.54 1 2 1.0 2.54 6.2 5.2 0.3 0.6 7.8 5.08 10.0 6.0 2.5 0.7 1 : Gate 2 : Source 3 : Drain SANYO : ZP Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Tc=25°C Conditions Ratings Unit 200 ±20 20 80 50 150 V V A A W °C °C --55 to +150 Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Gate-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS V(BR)GSS IDSS IGSS VGS(off) yfs RDS(on) Conditions ID=1mA, VGS=0 IG=±100µA, VDS=0 VDS=200V, VGS=0 VGS=± 16V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=10A ID=10A, VGS=10V Ratings min 200 ±20 100 ± 10 2.0 6 10 90 120 4.0 typ max Unit V V µA µA V S mΩ Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 13001 TS IM TA-3092 No.6610-1/4 2SK2864 Continued from preceding page. Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Diode Forward Voltage Gate resistance Symbol Ciss1 Ciss2 Coss Crss td(on) tr td(off) tf VSD Rg Conditions VDS=0, f=1MHz VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=20V, f=1MHz See specified Test Circuit See specified Test Circuit See specified Test Circuit See specified Test Circuit IS=20A, VGS=0 f=1MHz 1.0 Ratings min typ 3000 1700 400 150 28 85 130 90 1.0 2.0 max 3800 2150 420 185 35 110 165 105 1.5 3.0 Unit pF pF pF pF ns ns ns ns V Ω Switching Time Test Circuit VIN VIN PW=10µs D.C.≤1% VDD=100V ID=10A RL=10Ω 10V 0V D G VOUT P.G 50Ω S 2SK2864 20 ID -- VDS 8V 20 18 ID -- VGS VDS=10V 6V 18 10V 5V 16 16 Drain Current, ID -- A Drain Current, ID -- A 15V 14 12 10 8 6 4 2 0 0 14 12 10 8 6 4 2 0 75°C VGS=4V 1 2 3 4 5 IT01918 0 1 2 3 4 --25°C 5 Tc= 25°C 6 7 8 IT01919 Drain-to-Source Voltage, VDS -- V 200 RDS(on) -- VGS Gate-to-Source Voltage, VGS -- V 250 RDS(on) -- Tc Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 180 160 140 120 100 80 60 40 0 2 4 6 8 10 12 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Tc=25°C ID=10A VGS=10V ID=10A 200 150 100 50 14 16 0 --60 --40 --20 Gate-to-Source Voltage, VGS -- V IT01920 Case Temperature, Tc -- °C 0 20 40 60 80 100 120 140 160 IT01921 No.6610-2/4 2SK2864 100 yfs -- ID VDS=10V Forward Drain Current, IF -- A Forward Transfer Admittance, yfs -- S 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 0.1 2 3 5 7 1.0 2 3 5 7 100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 IF -- VSD VGS=0 = Tc 5°C --2 C 75° 25 °C 0.01 10 2 3 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 IT01923 Drain Current, ID -- A 10000 7 5 3 2 IT01922 10 9 Diode Forward Voltage, VSD -- V Ciss, Coss, Crss -- VDS f=1MHz Gate-to-Source Voltage, VGS -- V VDS=100V ID=10A Ciss 8 7 6 5 4 3 2 1 0 Ciss, Coss, Crss -- pF 1000 7 5 3 2 100 7 5 3 2 10 0 10 20 30 40 50 60 70 80 90 100 Coss Crss 0 5 10 15 5°C 25°C --25° C Tc=7 0.1 7 5 3 2 VGS -- Qg 20 25 30 35 40 45 Drain-to-Source Voltage, VDS -- V 1000 7 IT01924 100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 Total Gate Charge, Qg -- nC IT01925 SW Time -- ID ASO IDP=80A ID=20A 10 10 0µ s Switching Time, SW Time -- ns 5 3 2 VDD=100V VGS=10V Drain Current, ID -- A <10µs td(off) tf tr 1m s 100 7 5 3 2 Operation in this area is limited by RDS(on). m 10 s DC s op e 0m rat td(on) ion 10 0.1 2 3 5 7 1.0 2 3 5 Drain Current, ID -- A 60 10 IT01926 7 0.1 1.0 Tc=25°C Single pulse 2 3 5 7 10 2 3 5 7.


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