Document
Ordering number : ENN6610
2SK2864
N-Channel Silicon MOSFET
2SK2864
Ultrahigh-Speed Switching Applications
Features
• • •
Package Dimensions
0.4 0.2
Low ON-resistance. unit : mm Ultrahigh-speed switching. 2128 Enables simplified fabrication, high-density mounting, and miniaturization in end products due to the surface mountable package.
[2SK2864]
8.2 7.8 6.2 3
8.4 10.0
0.6
4.2
1.2
1.0 2.54
1
2
1.0 2.54
6.2 5.2
0.3 0.6 7.8
5.08 10.0 6.0
2.5
0.7
1 : Gate 2 : Source 3 : Drain SANYO : ZP
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Tc=25°C Conditions Ratings
Unit 200 ±20 20 80 50 150 V V A A W °C °C
--55 to +150
Electrical Characteristics at Ta=25°C
Parameter Drain-to-Source Breakdown Voltage Gate-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS V(BR)GSS IDSS IGSS VGS(off) yfs RDS(on) Conditions ID=1mA, VGS=0 IG=±100µA, VDS=0 VDS=200V, VGS=0 VGS=± 16V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=10A ID=10A, VGS=10V Ratings min 200 ±20 100 ± 10 2.0 6 10 90 120 4.0 typ max Unit V V µA µA V S mΩ
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
13001 TS IM TA-3092 No.6610-1/4
2SK2864
Continued from preceding page.
Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Diode Forward Voltage Gate resistance Symbol Ciss1 Ciss2 Coss Crss td(on) tr td(off) tf VSD Rg Conditions VDS=0, f=1MHz VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=20V, f=1MHz See specified Test Circuit See specified Test Circuit See specified Test Circuit See specified Test Circuit IS=20A, VGS=0 f=1MHz 1.0 Ratings min typ 3000 1700 400 150 28 85 130 90 1.0 2.0 max 3800 2150 420 185 35 110 165 105 1.5 3.0 Unit pF pF pF pF ns ns ns ns V Ω
Switching Time Test Circuit
VIN VIN PW=10µs D.C.≤1% VDD=100V ID=10A RL=10Ω
10V 0V
D G
VOUT
P.G
50Ω
S
2SK2864
20
ID -- VDS
8V
20 18
ID -- VGS
VDS=10V
6V
18
10V
5V
16
16
Drain Current, ID -- A
Drain Current, ID -- A
15V
14 12 10 8 6 4 2 0 0
14 12 10 8 6 4 2 0
75°C
VGS=4V
1
2
3
4
5 IT01918
0
1
2
3
4
--25°C
5
Tc=
25°C
6
7
8 IT01919
Drain-to-Source Voltage, VDS -- V
200
RDS(on) -- VGS
Gate-to-Source Voltage, VGS -- V
250
RDS(on) -- Tc
Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ
180 160 140 120 100 80 60 40 0 2 4 6 8 10 12
Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ
Tc=25°C ID=10A
VGS=10V ID=10A
200
150
100
50
14
16
0 --60
--40
--20
Gate-to-Source Voltage, VGS -- V
IT01920
Case Temperature, Tc -- °C
0
20
40
60
80
100
120
140
160
IT01921
No.6610-2/4
2SK2864
100
yfs -- ID
VDS=10V Forward Drain Current, IF -- A
Forward Transfer Admittance, yfs -- S
7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 0.1 2 3 5 7 1.0 2 3 5 7
100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2
IF -- VSD
VGS=0
= Tc
5°C --2
C 75°
25
°C
0.01 10 2 3 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 IT01923
Drain Current, ID -- A
10000 7 5 3 2
IT01922 10 9
Diode Forward Voltage, VSD -- V
Ciss, Coss, Crss -- VDS
f=1MHz Gate-to-Source Voltage, VGS -- V
VDS=100V ID=10A
Ciss
8 7 6 5 4 3 2 1 0
Ciss, Coss, Crss -- pF
1000 7 5 3 2 100 7 5 3 2 10 0 10 20 30 40 50 60 70 80 90 100
Coss
Crss
0
5
10
15
5°C 25°C --25° C
Tc=7
0.1 7 5 3 2
VGS -- Qg
20
25
30
35
40
45
Drain-to-Source Voltage, VDS -- V
1000 7
IT01924 100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2
Total Gate Charge, Qg -- nC
IT01925
SW Time -- ID
ASO
IDP=80A ID=20A
10
10 0µ s
Switching Time, SW Time -- ns
5 3 2
VDD=100V VGS=10V Drain Current, ID -- A
<10µs
td(off)
tf
tr
1m s
100 7 5 3 2
Operation in this area is limited by RDS(on).
m
10
s
DC s op e
0m
rat
td(on)
ion
10 0.1
2
3
5
7
1.0
2
3
5
Drain Current, ID -- A
60
10 IT01926
7
0.1 1.0
Tc=25°C Single pulse
2 3 5 7 10 2 3 5 7.