MOS Transistor. 2SK2865 Datasheet


2SK2865 Transistor. Datasheet pdf. Equivalent


2SK2865


Silicon N-Channel MOS Transistor
2SK2865
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π−MOSV)
2SK2865

Chopper Regulator, DC/DC Converter and Motor Drive Applications

• Low drain−source ON-resistance

: RDS (ON) = 4.2 Ω (typ.)

• High forward transfer admittance

: |Yfs| = 1.7 S (typ.)

• Low leakage current

: IDSS = 100 μA (max) (VDS = 600 V)

• Enhancement mode

: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

Characteristic

Symbol

Rating

Unit

6.5 ± 0.2 5.2 ± 0.2

Unit: mm
0.6 MAX.

1.5 ± 0.2

5.5 ± 0.2 9.5 ± 0.3

1.2 MAX.

0.8 MAX. 0.6 ± 0.15
1

1.05 MAX. 23

1.1 ± 0.2 0.6 MAX.

2.3 ± 0.2 0.1 ± 0.1

Drain−source voltage

Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage

DC (Note 1)

Drain current

Pulse (t = 1 ms) (Note 1)

Pulse (t = 100 μs) (Note 1)

Drain power dissipation (Tc = 25°C)

Single-pulse avalanche energy (Note 2)

Avalanche current

Repetitive avalanche energy (Note 3)

Channel temperature

Storage temperature range

VDSS VDGR VGSS
ID
IDP
IDP
PD
EAS
IAR EAR Tch Tstg

600 600 ±30
2
5
8
20 93
2 2 150 −55 to 150

V V V
A
A
A
W
mJ
A mJ °C °C

2.3 ± 0.15 2.3 ± 0.15
1. GATE 2. DRAIN
(HEAT SINK) 3. SOURSE

2 1
3

JEDEC

―

JEITA

―

TOSHIBA

2-7J1B

Weight: 0.36 g (typ.)

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product...



2SK2865
2SK2865
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π−MOSV)
2SK2865
Chopper Regulator, DC/DC Converter and Motor Drive
Applications
Low drainsource ON-resistance
: RDS (ON) = 4.2 (typ.)
High forward transfer admittance
: |Yfs| = 1.7 S (typ.)
Low leakage current
: IDSS = 100 μA (max) (VDS = 600 V)
Enhancement mode
: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
6.5 ± 0.2
5.2 ± 0.2
Unit: mm
0.6 MAX.
0.8 MAX.
0.6 ± 0.15
1
1.05 MAX.
23
1.1 ± 0.2
0.6 MAX.
Drainsource voltage
Draingate voltage (RGS = 20 k)
Gatesource voltage
DC (Note 1)
Drain current
Pulse (t = 1 ms)
(Note 1)
Pulse (t = 100 μs)
(Note 1)
Drain power dissipation (Tc = 25°C)
Single-pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
IDP
PD
EAS
IAR
EAR
Tch
Tstg
600
600
±30
2
5
8
20
93
2
2
150
55 to 150
V
V
V
A
A
A
W
mJ
A
mJ
°C
°C
2.3 ± 0.15 2.3 ± 0.15
1. GATE
2. DRAIN
HEAT SINK
3. SOURSE
2
1
3
JEDEC
JEITA
TOSHIBA
2-7J1B
Weight: 0.36 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and
Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristic
Symbol
Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Rth (chc)
Rth (cha)
6.25 °C / W
125 °C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 41 mH, RG = 25 , IAR = 2 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
Start of commercial production
2007-12
1 2013-11-01

2SK2865
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Gate leakage current
Gatesource breakdown voltage
Drain cutoff current
Drainsource breakdown voltage
Gate threshold voltage
Drainsource ON-resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
IGSS
V (BR) GSS
IDSS
V (BR) DSS
Vth
RDS (ON)
|Yfs|
Ciss
Crss
Coss
VGS = ±25 V, VDS = 0 V
IG = ±10 μA, VDS = 0 V
VDS = 600 V, VGS = 0 V
ID = 10 mA, VGS = 0 V
VDS = 10 V, ID = 1 mA
VGS = 10 V, ID = 1 A
VDS = 10 V, ID = 1 A
VDS = 10 V, VGS = 0 V, f = 1 MHz
Rise time
tr
Turnon time
Switching time
Fall time
ton
tf
2SK2865
Min Typ. Max Unit
— — ±10
±30 —
— — 100
600 —
2.0 — 4.0
— 4.2 5.0
0.8 1.7
— 380 —
— 40 —
— 120 —
μA
V
μA
V
V
S
pF
— 15 —
— 25 —
ns
— 20 —
Turnoff time
toff
— 80 —
Total gate charge (gatesource
plus gatedrain)
Gatesource charge
Gatedrain (“Miller”) charge
Qg
Qgs VDD 480 V, VGS = 10 V, ID = 2 A
Qgd
—9—
— 5 — nC
—4—
SourceDrain Ratings and Characteristics (Ta = 25°C)
Characteristic
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
IDR
IDRP
IDRP
VDSF
trr
Qrr
Test Condition
t = 1 ms
t = 100 μs
IDR = 2 A, VGS = 0 V
IDR = 2 A, VGS = 0 V
dIDR / dt = 100 A/μs
Min Typ. Max Unit
—— 2 A
—— 5 A
—— 8 A
— — 1.5 V
— 1000 —
ns
— 3.5 — μC
Marking
K2865
Part No.
(or abbreviation code)
Lot No.
Note 4
Note 4 : A line under a Lot No. identifies the indication of product Labels
[[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is Directive 2011/65/EU of the European Parliament and
of the Council of 8 June 2011 on the restriction of the use of certain
hazardous substances in electrical and electronic equipment.
2 2013-11-01




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