2SK2865

2SK2865 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π−MOSV) 2SK2865 Chopper Regulator, DC/DC Converter and Motor Drive Applications Low drain−source ON-resistance : RDS (ON) = 4.2 Ω (typ.) High forward transfer admittance : |Yfs| = 1.7 S (typ.) Low leakage current : IDSS = 100 μA (max) (VDS = 600 V) Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit 6.5 ± 0.2 5.2 ± 0.2 Unit: mm 0.6 MAX. 1.5 ± 0.2 5.5 ± 0.2 9.5 ± 0.3 1.2 MAX. 0.8 MAX. 0.6 ± 0.15 1 1.05 MAX. 23 1.1 ± 0.2 0.6 MAX. 2.3 ± 0.2 0.1 ± 0.1 Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage DC (Note 1) Drain current Pulse (t = 1 ms) (Note 1) Pulse (t = 100 μs) (Note 1) Drain power dissipation (Tc = 25°C) Single-pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range VDSS VDGR VGSS ID IDP IDP PD EAS IAR EAR Tch Tstg 600 600 ±30 2 5 8 20 93 2 2 150 −55 to 150 V V V A A A W mJ A mJ °C °C 2.3 ± 0.15 2.3 ± 0.15 1. GATE 2. DRAIN （HEAT SINK） 3. SOURSE 2 1 3 JEDEC ― JEITA ― TOSHIBA 2-7J1B Weight: 0.36 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating tempe...