2SK2866 Effect Transistor Datasheet

2SK2866 Datasheet, PDF, Equivalent


Part Number

2SK2866

Description

Silicon N Channel MOS Type Field Effect Transistor

Manufacture

Toshiba Semiconductor

Total Page 6 Pages
Datasheet
Download 2SK2866 Datasheet


2SK2866
2SK2866
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
2SK2866
Chopper Regulator, DCDC Converter and Motor Drive
Applications
Unit: mm
z Low drainsource ON resistance : RDS (ON) = 0.54 (typ.)
z High forward transfer admittance : |Yfs| = 9.0 S (typ.)
z Low leakage current
: IDSS = 100 μA (max) (VDS = 600 V)
z Enhancement mode
: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drainsource voltage
Draingate voltage (RGS = 20 k)
Gatesource voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
600
600
±30
10
40
125
363
10
12.5
150
55~150
V
V
V
A
A
W
mJ
A
mJ
°C
°C
JEDEC
TO-220AB
JEITA
SC-46
TOSHIBA
2-10P1B
Weight: 1.9 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to
ambient
Rth (chc)
Rth (cha)
1.0 °C / W
83.3 °C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 6.36 mH, RG = 25 , IAR = 10 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device.
Please handle with caution.
1 2006-11-08

2SK2866
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Gate leakage current
Gatesource breakdown voltage
Drain cutoff current
Drainsource breakdown voltage
Gate threshold voltage
Drainsource ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
IGSS
V (BR) GSS
IDSS
V (BR) DSS
Vth
RDS (ON)
|Yfs|
Ciss
Crss
Coss
VGS = ±25 V, VDS = 0 V
IG = ±10 μA, VDS = 0 V
VDS = 600 V, VGS = 0 V
ID = 10 mA, VGS = 0 V
VDS = 10 V, ID = 1 mA
VGS = 10 V, ID = 5 A
VDS = 10 V, ID = 5 A
VDS = 10 V, VGS = 0 V, f = 1 MHz
Rise time
tr
Switching time
Turnon time
Fall time
ton
tf
Turnoff time
Total gate charge (gatesource
plus gatedrain)
Gatesource charge
Gatedrain (“miller”) Charge
toff
Qg
Qgs VDD 400 V, VGS = 10 V, ID = 10 A
Qgd
SourceDrain Ratings and Characteristics (Ta = 25°C)
Characteristics
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
IDR
IDRP
VDSF
trr
Qrr
Test Condition
IDR = 10 A, VGS = 0 V
IDR = 10 A, VGS = 0 V
dIDR / dt = 100 A / μs
Marking
2SK2866
Min Typ. Max Unit
— — ±10
±30 —
— — 100
600 —
2.0 — 4.0
— 0.54 0.75
3.0 9.0
— 2040 —
— 210 —
— 630 —
μA
V
μA
V
V
S
pF
— 22 —
— 58 —
ns
— 36 —
— 190 —
— 45 —
— 25 —
— 20 —
nC
Min Typ. Max Unit
— — 10 A
— — 40 A
— — 1.7 V
— 1300 —
ns
— 16 — μC
K2866
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2
2006-11-08


Features 2SK2866 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) 2SK2866 Chopper Regulator, DC−DC Con verter and Motor Drive Applications Un it: mm z Low drain−source ON resista nce : RDS (ON) = 0.54 Ω (typ.) z Hig h forward transfer admittance : |Yfs| = 9.0 S (typ.) z Low leakage current : IDSS = 100 μA (max) (VDS = 600 V) z Enhancement mode : Vth = 2.0~4.0 V (VD S = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain−source vo ltage Drain−gate voltage (RGS = 20 k Ω) Gate−source voltage Drain curre nt DC (Note 1) Pulse (Note 1) Drain p ower dissipation (Tc = 25°C) Single p ulse avalanche energy (Note 2) Avalanc he current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range VDSS VDGR VGSS ID I DP PD EAS IAR EAR Tch Tstg 600 600 ±3 0 10 40 125 363 10 12.5 150 −55~150 V V V A A W mJ A mJ °C °C JEDEC TO- 220AB JEITA SC-46 TOSHIBA 2-10P1B Weight: 1.9 g (typ.) Note: Using continuously un.
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