2SK2869

2SK2869 Silicon N Channel MOS FET High Speed Power Switching ADE-208-570 1st. Edition Features Low on-resistance R DS = 0.033 Ω typ. High speed switching 4V gate drive device can be driven from 5V source Outline DPAK–2 4 4 D 1 2 G 3 S 1 2 3 1. Gate 2. Drain 3. Source 4. Drain 2SK2869 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω Symbol VDSS VGSS ID I D(pulse)* I DR I AP * 3 3 2 1 Ratings 60 ±20 20 80 20 20 34 30 150 –55 to +150 Unit V V A A A A mJ W °C °C EAR* Pch* Tch Tstg 2 2SK2869 Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltege drain current Gate to source cutoff voltage Symbol V(BR)DSS V(BR)GSS I GSS I DSS VGS(off) Min 60 ±20 — — 1.5 — — 10 — — — — — — — — — Typ — — — — — 0.033 0.055 16 740 380 140 10 110 105 120 1.0 40 Max — — ±10 10 2.5 0.045 0.07 — — — — — — — — — — Unit V V µA µA V Ω Ω S pF pF pF ns ns ns ns V V I F = 20A, VGS = 0 I F = 20A, VGS = 0 diF/ dt = 50A/µs Test Conditions I D = 10mA, VGS = 0 I G = ±100µA, VDS = 0 VGS = ±16V, VDS = 0 VDS = 60 V, VGS = 0 I D = 1mA, VDS = 10V I D = 10A, VGS = 10V*1 I D = 10A, VGS = 4V*1 I D = 10A,...