2SK2869 MOS FET Datasheet

2SK2869 Datasheet, PDF, Equivalent


Part Number

2SK2869

Description

Silicon N Channel MOS FET

Manufacture

Hitachi Semiconductor

Total Page 10 Pages
Datasheet
Download 2SK2869 Datasheet


2SK2869
2SK2869
Silicon N Channel MOS FET
High Speed Power Switching
Features
Low on-resistance
RDS = 0.033 typ.
High speed switching
4V gate drive device can be driven from 5V source
Outline
DPAK–2
4
4
D
G
S
12 3
12 3
1. Gate
2. Drain
3. Source
4. Drain
ADE-208-570
1st. Edition

2SK2869
2SK2869
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
VDSS
VGSS
ID
I *1
D(pulse)
I DR
I AP * 3
EAR* 3
Pch*2
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW 10µs, duty cycle 1 %
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg 50
Ratings
60
±20
20
80
20
20
34
30
150
–55 to +150
Unit
V
V
A
A
A
A
mJ
W
°C
°C
2


Features 2SK2869 Silicon N Channel MOS FET High S peed Power Switching ADE-208-570 1st. Edition Features • Low on-resistance R DS = 0.033 Ω typ. • High speed sw itching • 4V gate drive device can be driven from 5V source Outline DPAK– 2 4 4 D 1 2 G 3 S 1 2 3 1. Gate 2. Drain 3. Source 4. Drain 2SK2869 Ab solute Maximum Ratings (Ta = 25°C) Ite m Drain to source voltage Gate to sourc e voltage Drain current Drain peak curr ent Body to drain diode reverse drain c urrent Avalanche current Avalanche ener gy Channel dissipation Channel temperat ure Storage temperature Notes: 1. PW 10 µs, duty cycle ≤ 1 % 2. Value a t Tc = 25°C 3. Value at Tch = 25°C, R g ≥ 50 Ω Symbol VDSS VGSS ID I D(pu lse)* I DR I AP * 3 3 2 1 Ratings 60 20 20 80 20 20 34 30 150 –55 to +150 Unit V V A A A A mJ W °C °C EAR* Pch* Tch Tstg 2 2SK2869 Electrical Ch aracteristics (Ta = 25°C) Item Drain t o source breakdown voltage Gate to sour ce breakdown voltage Gate to source leak current Zero gate voltege drain current Gate to so.
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