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2SK2884 Dataheets PDF



Part Number 2SK2884
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description Silicon N-Channel MOSFET
Datasheet 2SK2884 Datasheet2SK2884 Datasheet (PDF)

2SK2884 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII) 2SK2884 Chopper Regulator, DC−DC Converter Applications z Low drain−source ON resistance : RDS (ON) = 1.9 Ω (typ.) z High forward transfer admittance : |Yfs| = 3.8 S (typ.) z Low leakage current : IDSS = 100 μA (max) (VDS = 640 V) z Enhancement mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain−source voltage Drain−gate voltage (RGS.

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2SK2884 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII) 2SK2884 Chopper Regulator, DC−DC Converter Applications z Low drain−source ON resistance : RDS (ON) = 1.9 Ω (typ.) z High forward transfer admittance : |Yfs| = 3.8 S (typ.) z Low leakage current : IDSS = 100 μA (max) (VDS = 640 V) z Enhancement mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC (Note 1) Pulse (Note 1) Drain power dissipation Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg 800 800 ±30 5 15 100 370 5 10 150 −55~150 V V V A A W mJ A mJ °C °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to case Thermal resistance, channel to ambient Rth (ch−c) Rth (ch−a) 1.25 °C / W 83.3 °C / W Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: Note 3: VDD = 90 V, Tch = 25°C (initial), L = 27 mH, RG = 25 Ω, IAR = 5 A Repetitive rating: pulse width limited by maximum channel temperature. This transistor is an electrostatic-sensitive device. Please handle with caution. 1 Unit: mm JEDEC ― JEITA ― TOSHIBA 2-10S1B Weight: 1.5 g (typ.) JEDEC ― JEITA ― TOSHIBA 2-10S2B Weight: 1.5 g (typ.) 2006-11-10 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Gate leakage current Gate−source breakdown voltage Drain cut−off current Drain−source breakdown voltage Gate threshold voltage Drain−source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance IGSS V (BR) GSS IDSS V (BR) DSS Vth RDS (ON) |Yfs| Ciss Crss Coss VGS = ±30 V, VDS = 0 V IG = ±10 μA, VDS = 0 V VDS = 640 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 3 A VDS = 15 V, ID = 3 A VDS = 25 V, VGS = 0 V, f = 1 MHz Rise time tr Switching time Turn−on time Fall time ton tf Turn−off time Total gate charge (gate−source plus gate−drain) Gate−source charge Gate−drain (“miller”) Charge toff Qg Qgs VDD ≈ 400 V, VGS = 10 V, ID = 5 A Qgd Source−Drain Ratings and Characteristics (Ta = 25°C) Characteristics Continuous drain reverse current (Note 1) Pulse drain reverse current (Note 1) Forward voltage (diode) Reverse recovery time Reverse recovery charge Symbol IDR IDRP VDSF trr Qrr Test Condition — — IDR = 5 A, VGS = 0 V IDR = 5 A, VGS = 0 V dIDR / dt = 100 A / μs Marking 2SK2884 Min Typ. Max Unit — — ±10 ±30 — — — — 100 800 — — 2.0 — 4.0 — 1.9 2.2 1.0 3.8 — — 1080 — — 16 — — 105 — μA V μA V V Ω S pF — 40 — — 80 — ns — 40 — — 140 — — 34 — — 16 — nC — 18 — Min Typ. Max Unit —— 5 A — — 15 A — — −1.9 V — 1000 — ns — 7.5 — μC K2884 Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2006-11-10 2SK2884 3 2006-11-10 2SK2884 4 2006-11-10 2SK2884 RG = 25 Ω VDD = 90 V, L = 27 mH EAS = 1 2 ⋅ L ⋅ I2 ⋅ ⎜⎛ ⎝ BVDSS BVDSS − VDD ⎟⎞ ⎠ 5 2006-11-10 2SK2884 RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 20070701-EN • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring e.


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