Document
2SK2884
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII)
2SK2884
Chopper Regulator, DC−DC Converter Applications
z Low drain−source ON resistance : RDS (ON) = 1.9 Ω (typ.)
z High forward transfer admittance : |Yfs| = 3.8 S (typ.)
z Low leakage current
: IDSS = 100 μA (max) (VDS = 640 V)
z Enhancement mode
: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain−source voltage
Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage
Drain current
DC (Note 1) Pulse (Note 1)
Drain power dissipation
Single pulse avalanche energy (Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
VDSS VDGR VGSS
ID IDP PD
EAS
IAR EAR Tch Tstg
800 800 ±30
5 15 100
370
5 10 150 −55~150
V V V A A W
mJ
A mJ °C °C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Rth (ch−c) Rth (ch−a)
1.25 °C / W 83.3 °C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: Note 3:
VDD = 90 V, Tch = 25°C (initial), L = 27 mH, RG = 25 Ω, IAR = 5 A
Repetitive rating: pulse width limited by maximum channel temperature.
This transistor is an electrostatic-sensitive device. Please handle with caution.
1
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-10S1B
Weight: 1.5 g (typ.)
JEDEC
―
JEITA
―
TOSHIBA
2-10S2B
Weight: 1.5 g (typ.)
2006-11-10
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Gate leakage current Gate−source breakdown voltage Drain cut−off current Drain−source breakdown voltage Gate threshold voltage Drain−source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance
IGSS V (BR) GSS
IDSS V (BR) DSS
Vth RDS (ON)
|Yfs| Ciss Crss Coss
VGS = ±30 V, VDS = 0 V IG = ±10 μA, VDS = 0 V VDS = 640 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 3 A VDS = 15 V, ID = 3 A
VDS = 25 V, VGS = 0 V, f = 1 MHz
Rise time
tr
Switching time
Turn−on time Fall time
ton tf
Turn−off time
Total gate charge (gate−source plus gate−drain) Gate−source charge Gate−drain (“miller”) Charge
toff
Qg Qgs VDD ≈ 400 V, VGS = 10 V, ID = 5 A Qgd
Source−Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Continuous drain reverse current (Note 1)
Pulse drain reverse current (Note 1)
Forward voltage (diode) Reverse recovery time Reverse recovery charge
Symbol
IDR
IDRP
VDSF trr Qrr
Test Condition —
— IDR = 5 A, VGS = 0 V IDR = 5 A, VGS = 0 V dIDR / dt = 100 A / μs
Marking
2SK2884
Min Typ. Max Unit
— — ±10
±30 —
—
— — 100
800 —
—
2.0 — 4.0
— 1.9 2.2
1.0 3.8
—
— 1080 —
— 16 —
— 105 —
μA V μA V V Ω S
pF
— 40 —
— 80 — ns
— 40 —
— 140 —
— 34 — — 16 — nC — 18 —
Min Typ. Max Unit —— 5 A
— — 15 A
— — −1.9 V
— 1000 —
ns
— 7.5 — μC
K2884
Part No. (or abbreviation code) Lot No.
A line indicates lead (Pb)-free package or lead (Pb)-free finish.
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2006-11-10
2SK2884
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2SK2884
RG = 25 Ω VDD = 90 V, L = 27 mH
EAS
=
1 2
⋅ L ⋅ I2
⋅
⎜⎛ ⎝
BVDSS BVDSS − VDD
⎟⎞ ⎠
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2SK2884
RESTRICTIONS ON PRODUCT USE
• The information contained herein is subject to change without notice.
20070701-EN
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring e.