DatasheetsPDF.com

2SK2885S Dataheets PDF



Part Number 2SK2885S
Manufacturers Hitachi Semiconductor
Logo Hitachi Semiconductor
Description Silicon N-Channel MOSFET
Datasheet 2SK2885S Datasheet2SK2885S Datasheet (PDF)

2SK2885(L), 2SK2885(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-545 A 2nd. Edition Features • Low on-resistance R DS(on) = 10mΩ typ. • 4V gate drive devices. • High speed switching Outline LDPAK 4 4 D 1 1 G 2 3 2 3 1. Gate 2. Drain 3. Source 4. Drain S 2SK2885(L), 2SK2885(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temp.

  2SK2885S   2SK2885S


Document
2SK2885(L), 2SK2885(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-545 A 2nd. Edition Features • Low on-resistance R DS(on) = 10mΩ typ. • 4V gate drive devices. • High speed switching Outline LDPAK 4 4 D 1 1 G 2 3 2 3 1. Gate 2. Drain 3. Source 4. Drain S 2SK2885(L), 2SK2885(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Ratings 30 ±20 45 180 45 75 150 –55 to +150 Unit V V A A A W °C °C 2 2SK2885(L), 2SK2885(S) Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Zero gate voltege drain current Gate to source leak current Symbol V(BR)DSS V(BR)GSS I DSS I GSS Min 30 ±20 — — 1.0 — — 20 — — — — — — — — — Typ — — — — — 10 15 30 1570 1100 410 32 300 180 200 1.0 75 Max — — 10 ±10 2.0 14 25 — — — — — — — — — — Unit V V µA µA V mΩ mΩ S pF pF pF ns ns ns ns V ns I F = 45A, VGS = 0 I F = 45A, VGS = 0 diF/ dt = 50A/µs Test Conditions I D = 10mA, VGS = 0 I G = ±100µA, VDS = 0 VDS = 30 V, VGS = 0 VGS = ±16V, VDS = 0 I D = 1mA, VDS = 10V I D = 20A, VGS = 10V*1 I D = 20A, VGS = 4V*1 I D = 20A, VDS = 10V*1 VDS = 10V VGS = 0 f = 1MHz VGS = 10V, ID = 20A RL = 0.5Ω Gate to source cutoff voltage VGS(off) Static drain to source on state RDS(on) resistance Forward transfer admittance Input capacitance Output capacitance RDS(on) |yfs| Ciss Coss Reverse transfer capacitance Crss Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 1. Pulse test t d(on) tr t d(off) tf VDF t rr See characteristics curves of 2SK2737 3 2SK2885(L), 2SK2885(S) Main Characteristics Power vs. Temperature Derating 100 Pch (W) 1000 I D (A) 300 100 30 10 3 1 10 µs 10 Maximum Safe Operation Area 75 Channel Dissipation Drain Current DC PW 1 50 25 Operation in this area is limited by R DS(on) Op 10 m (T erat s c = io 25 n °C ) = m 0µ s s 0 50 100 150 Tc (°C) 200 Case Temperature 0.3 Ta = 25°C 1 shot pulse 0.1 3 30 0.1 0.3 1 10 100 Drain to Source Voltage V DS (V) Normalized Transient Thermal Impedance vs. Pulse Width 3 Normalized Transient Thermal Impedance γ s (t) Tc = 25°C 1 D=1 0.5 0.3 0.2 0.1 0.1 0.05 θ ch – c(t) = γ s (t) • θ ch – c θ ch – c = 1.67 °C/W, Tc = 25 °C PDM PW T 0.03 0.02 1 lse 0.0 t pu o h 1s D= PW T 0.01 10 µ 100 µ 1m 10 m 100 m Pulse Width PW (S) 1 10 4 2SK2885(L), 2SK2885(S) Switching Time Test Circuit Vin Monitor D.U.T. RL Vin Vin 10 V 50 Ω V DD = 10 V Vout 10% 10% 90% td(on) tr 90% td(off) tf 10% Vout Monitor Switching Time Waveforms 90% 5 2SK2885(L), 2SK2885(S) Package Dimensions Unit: mm 10.2 ± 0.3 (1.4) 4.44 ± 0.2 1.3 ± 0.2 8.6 ± 0.3 10.0 +0.3 –0.5 11.3 ± 0.5 10.2 ± 0.3 (1.4) 4.44 ± 0.2 1.3 ± 0.2 (1.5) (1.5) (1.5) 0.76 ± 0.1 11.0 ± 0.5 8.6 ± 0.3 10.0 +0.3 –0.5 1.2 ± 0.2 0.86 +0.2 –0.1 1.27 ± 0.2 2.59 ± 0.2 0.1 +0.2 –0.1 2.59 ± 0.2 0.4 ± 0.1 0.4 ± 0.1 2.54 ± 0.5 2.54 ± 0.5 2.54 ± 0.5 1.2 ± 0.2 0.86 +0.2 –0.1 2.54 ± 0.5 L type S type 3.0 +0.3 –0.5 1.27 ± 0.2 Hitachi Code EIAJ JEDEC LDPAK — — 6 Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating H.


2SK2885L 2SK2885S 2SK2886


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)