2SK2893-01

2SK2893-01 FAP-IIIB Series > Features High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated N-channel MOS-FET 30V 4mΩ ±100A 150W > Outline Drawing > Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters > Maximum Ratings and Characteristics - Absolute Maximum Ratings (TC=25°C), unless otherwise specified Item Drain-Source-Voltage Continous Drain Current Pulsed Drain Current Gate-Source-Voltage Maximum Avalanche Energy Max. Power Dissipation Operating and Storage Temperature Range Symbol V DS ID I D(puls) V GS E AV PD T ch T stg Characteristics 30 ±100 ±400 ±16 2536.7 150 150 -55 ~ +150 L=0.338mH,Vcc=12V Unit V A A V mJ* W °C °C - Electrical Characteristics (TC=25°C), unless otherwise specified Item Drain-Source Breakdown-Voltage Gate Threshhold Voltage Zero Gate Voltage Drain Current Gate Source Leakage Current Drain Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On-Time ton (ton=td(on)+tr) Turn-Off-Time toff (ton=td(off)+tf) Avalanche Capability Diode Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge Symbol BV DSS V GS(th) I DSS I DSS I DSS R DS(on) g C C C t t t t I V t Q fs iss oss rss d(on) r d(off) f AV SD rr rr Test conditions ID=1mA VGS=0V ID=1mA VDS=VGS VDS=30V Tch=25°C VGS=0V Tch=125°C VGS=±16V VDS=0V ID=50A VGS=4V ID=50A VGS=10V ID=50A VDS=25V VDS=25V VGS=0V f=1MHz VCC=15V VGS=10V ID=100A RGS=10 Ω Tch=25°C L...