Document
2SK2908-01L,S
FAP-IIIB Series
> Features
High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated
N-channel MOS-FET
600V
1,2Ω
±9A
60W
> Outline Drawing
> Applications
- Motor Control - General Purpose Power Amplifier - DC-DC converters
> Maximum Ratings and Characteristics
- Absolute Maximum Ratings (TC=25°C), unless otherwise specified
Item Drain-Source-Voltage Continous Drain Current Pulsed Drain Current Gate-Source-Voltage Repetitive or non-repetitive Maximum Avalanche Energy Max. Power Dissipation Operating and Storage Temperature Range Symbol V DS ID I D(puls) V GS I AR E AV PD T ch T stg Rating 600 ±9 ±32 ±35 9 144.4 60 150 -55 ~ +150
L=3.27mH,Vcc=60V
Unit V A A V V mJ* W °C °C
- Electrical Characteristics (TC=25°C), unless otherwise specified
Item Drain-Source Breakdown-Voltage Gate Threshhold Voltage Zero Gate Voltage Drain Current Gate Source Leakage Current Drain Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On-Time ton (ton=td(on)+tr) Turn-Off-Time toff (ton=td(off)+tf) Avalanche Capability Diode Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge Symbol BV DSS V GS(th) I DSS I DSS I GSS R DS(on) g C C C t t t t I V t Q
fs iss oss rss d(on) r d(off) f AV SD rr rr
Test conditions ID=1mA VGS=0V ID=1mA VDS=VGS VDS=600V Tch=25°C VGS=0V Tch=125°C VGS=±35V VDS=0V ID=4,5A VGS=10V VGS=10V ID=4,5A ID=4,5A VDS=25V VDS=25V VGS=0V f=1MHz VCC=300V VGS=10V ID=9A RGS=10 Ω Tch=25°C L = 3,27mH IF=2 X IDR VGS=0V Tch=25°C IF=IDR VGS=0V -dIF/dt=100A/µs Tch=25°C
Min. 600 3,5
Typ. 4,0 10 0,2 10 1,0 1,0 5 900 150 70 25 70 60 35 1,0 550 7,0
Max. 4,5 500 1,0 100 1,2 1,2 1400 230 110 40 110 90 60 1,50
2,5
9
Unit V V µA mA nA Ω Ω S pF pF pF ns ns ns ns A V ns µC
- Thermal Characteristics Item Thermal Resistance
R R
th(ch-c) th(ch-a)
Symbol channel to case channel to ambient
Min.
Typ.
Max. 2,08 75,0
Unit °C/W °C/W
N-channel MOS-FET
600V
2SK2908-01L,S
FAP-IIIB Series
Drain-Source On-State Resistance vs. Tch
RDS(on) = f(Tch); ID=4,5A; VGS=10V
1,2Ω
±9A
60W
> Characteristics
Typical Output Characteristics
ID=f(VDS); 80µs pulse test; TC=25°C
Typical Transfer Characteristics
ID=f(VGS); 80µs pulse test; VDS=25V; Tch=25°C
↑
ID [A]
↑
1
RDS(ON) [mΩ ]
↑ 2
ID [A]
3
VDS [V]
→
Tch [°C]
→
VGS [V]
→
Typical Drain-Source On-State-Resistance vs. ID
RDS(on)=f(ID); 80µs pulse test; TC=25°C
Typical Forward Transconductance vs. ID
gfs=f(ID); 80µs pulse test; VDS=25V; Tch=25°C
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch); ID=1mA; VDS=VGS
↑
RDS(ON) [mΩ ]
↑
gfs [S]
↑ 5
VGS(th) [V]
4
6
ID [A]
→
ID [A]
→
Tch [°C]
→
Typical Capacitances vs. VDS
C=f(VDS); VGS=0V; f=1MHz
Typical Gate Charge Characteristic
VGS=f(Qg); ID=9A; TC=25°C
Forward Characteristics of Reverse Diode
IF=f(VSD); 80µs pulse test;VGS=0V
↑
C [F]
↑
VDS [V]
↑
VGS [V]
↑
IF [A]
7
8
9
VDS [V]
→
Qg [nC]
→
VSD [V]
→
Maximum Avalanche Energy vs. starting Tch
Eas=f(starting Tch): VCC=60V; IAV ≤9A
Safe Operation Area
ID=f(VDS): D=0,01, Tc=25°C
Transient Thermal impedance
↑
EAV [mJ]
10
↑
ID [A]
12
↑
Zth(ch-c) [K/W]
Zthch=f(t) parameter:D=t/T
starting Tch [°C]
→
VDS [V]
→
t [s]
→
This specification is subject to change without notice!
N-channel MOS-FET
600V
1,2Ω
2SK2908-01L,S
FAP-IIIB Series
±9A
60W
> Characteristics
Power Dissipation PD=f(TC)
125
100
PD / PDmax [%]
75
50
25
0 0 25 50 75 TC [°C] 100 125 150
120
Maximum Avalanche Current vs. starting Tch IAV=f(starting Tch)
100
80 IAV / IAVmax [%]
60
40
20
0 0 25 50 75 starting Tch [°C] 100 125 150
This specification is subject to change without notice!
.