2SK2922

2SK2922 Silicon N Channel MOS FET UHF Power Amplifier ADE-208-675(Z) 1st. Edition Aug. 1998 Features High power output, High gain, High efficiency PG = 8.0dB, Pout = 31dBm, ηD = 57 %min. (f = 836.5MHz) Compact package capable of surface mounting Outline UPAK 3 2 1 4 1. Gate 2. Source 3. Drain 4. Source This Device is sensitive to Electro Static Discharge. An Adequate handling procedure is requested. 2SK2922 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) Pch Tch Tstg Note1 Note2 Ratings 10 ±6 0.7 1.4 3 150 –45 to +150 Unit V V A A W °C °C 1. PW ≤ 10ms, duty cycle ≤ 50 % 2. Value at Tc = 25° C Electrical Characteristics (Ta = 25°C) Item Symbol Min — — 0.4 — — 31 57 Typ — — — 27 13 — — Max 100 ±5.0 1.2 — — — — Unit µA µA V pF pF dBm % Test Conditions VDS = 10 V, VGS = 0 VGS = ±6V, VDS = 0 I D = 3mA, VDS = 5V VGS = 2V, VDS = 0, f = 1MHz VDS = 5, VGS = 0, f = 1MHz VDS = 4.7V, f =836.5Mhz Pin = 23dBm VDS = 4.7V, f =836.5Mhz Pin = 23dBm Zero gate voltage drain current I DSS Gate to source leak current Gate to source cutoff voltage Input capacitance Output capacitance Output Power Drain Rational Note: 1. Marking is “HX”. I GSS VGS(off) Ciss Coss Pout ηD 2 2SK2922 Main Characteristics Maximum Channel Power Dissipation Curve Pch (W) 4 5 Typical Output Characteristics Pulse Test 6V 5.5 V 5V 4.5 V ...