2SK2926L

2SK2926(L), 2SK2926(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-535 1st. Edition Features Low on-resistance R DS(on) = 0.042Ω typ. 4V gate drive devices. High speed switching Outline DPAK–2 4 4 D 1 2 G 3 S 1 2 3 1. Gate 2. Drain 3. Source 4. Drain 2SK2926(L), 2SK2926(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Ta = 25°C 3. Value at Ta = 25°C, Rg ≥ 50 Ω Symbol VDSS VGSS ID I D(pulse)* I DR I AP * 3 3 2 1 Ratings 60 ±20 15 60 15 15 19 25 150 –55 to +150 Unit V V A A A A mJ W °C °C EAR* Pch* Tch Tstg 2 2SK2926(L), 2SK2926(S) Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Zero gate voltege drain current Gate to source leak current Symbol V(BR)DSS V(BR)GSS I DSS I GSS Min 60 ±20 — — 1.5 — — 7 — — — — — — — — — Typ — — — — — 0.042 0.065 11 500 260 110 10 80 100 110 1.0 55 Max — — 10 ±10 2.5 0.055 0.11 — — — — — — — — — — Unit V V µA µA V Ω Ω S pF pF pF ns ns ns ns V ns I F = 15A, VGS = 0 I F = 15A, VGS = 0 diF/ dt = 50A/µs Test Conditions I D = 10mA, VGS = 0 I G = ±100µA, VDS = 0 VDS = 60 V, VGS = 0 VGS = ±16V, VDS = 0 I D = 1mA, VDS = 10V I D = 8A, VGS = 10V*1 I D = 8A, VGS = 4V*1 I D = 8A, VDS = 10V*1 VDS = 10V ...