2SK2941

DATA SHEET MOS FIELD EFFECT TRANSISTORS 2SK2941 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is n-Chanel MOS Field Effect Transistor designed high current switching application. PACKAGE DIMENSIONS inmillimeters 3.0±0.3 FEATURE Low On-Resistance RDS(on)1 = 14 mΩ Typ. (VGS = 10 V, ID =18 A) RDS(on)2 = 22 mΩ Typ. (VGS = 4 V, ID = 18 A) Low Ciss Ciss = 1250 pF Typ. 10.6 MAX. 3.6±0.2 10.0 5.9 MIN. 12.7 MIN. 15.5 MAX. 4.8 MAX. 1.3±0.2 4 1 2 3 1.3±0.2 6.0 MAX. Built-in G-S Protection Diode 0.5±0.2 2.8±0.2 ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) Maximum Voltages and Currents Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse)* Maximum Power Dissipation Total Power Dissipation (TA = 25 ˚C) Total Power Dissipation (TC = 25 ˚C) Maximum Temperature Channel Temperature Storage Temperature * PW ≤ 10 µs, Duty Cycle ≤ 1% Tch Tstg 150 –55 to + 125 ˚C ˚C PT PT 1.5 60 W W VDSS VGSS ID(DC) ID(Pulse) 30 ± 20 ± 35 ± 140 V V A A 0.75±0.1 2.54 2.54 1. Gate 2. Drain 3. Source 4. Fin (Drain) JEDEC: TO-220AB MP-25 (TO-220) Drain Gate Dody Diode Gate Protection Diode Source The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device acutally used, an addtional protection circuit is externally required if voltage exeeding the rated voltage may be applied to this device. The information in this document is subject to change without notice. Document No. D11007EJ1...