N-Channel Silicon MOSFET
Ordering number : ENN6916
2SK2951
N-Channel Silicon MOSFET
2SK2951
Ultrahigh-Speed Switching Applications
Features
• •...
Description
Ordering number : ENN6916
2SK2951
N-Channel Silicon MOSFET
2SK2951
Ultrahigh-Speed Switching Applications
Features
Package Dimensions
unit : mm 2062A
[2SK2951]
4.5 1.6 1.5
Low ON-resistance. Ultrahigh-speed switching.
0.5
3
1.5
2
3.0
1
1.0
0.4
2.5 4.25max
0.4
0.75
1 : Gate 2 : Drain 3 : Source SANYO : PCP (Bottom view)
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (250mm2!0.8mm) Tc=25°C Conditions
Ratings 200 ±20 1 4 1.5 3.5 150 --55 to +150
Unit V V A A W W °C °C
Electrical Characteristics at Ta=25°C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on) Conditions ID=1mA, VGS=0 VDS=200V, VGS=0 VGS=± 15V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=0.5A ID=0.5A, VGS=10V Ratings min 200 100 ± 10 2.0 0.4 0.8 2.5 3.5 3.0 typ max Unit V µA µA V S Ω
Marking : KS
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Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications who...
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