Document
2SK2956
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-566B (Z) 3rd. Edition Jun 1998 Features
• Low on-resistance R DS(on) = 7mΩ typ. • 4V gate drive devices. • High speed switching
Outline
TO–220CFM
D
G 1 2 3
S
1. Gate 2. Drain 3. Source
2SK2956
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C Symbol VDSS VGSS ID I D(pulse) I DR Pch Tch Tstg
Note2 Note1
Ratings 30 ±20 50 200 50 35 150 –55 to +150
Unit V V A A A W °C °C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min 30 ±20 — — 1.0 — — 25 — — — — — — — — — Typ — — — — — 7.0 12 45 2000 1500 350 20 330 190 190 0.95 60 Max — — 10 ±10 2.0 10 18 — — — — — — — — — — Unit V V µA µA V mΩ mΩ S pF pF pF ns ns ns ns V ns I F = 50A, VGS = 0 I F = 50A, VGS = 0 diF/ dt =50A/µs Test Conditions I D = 10mA, VGS = 0 I G = ±100µA, VDS = 0 VDS = 30 V, VGS = 0 VGS = ±16V, VDS = 0 I D = 1mA, VDS = 10V I D = 25A, VGS = 10V Note3 I D = 25A, VGS = 4V Note3 I D = 25A, VDS = 10V Note3 VDS = 10V VGS = 0 f = 1MHz VGS = 10V, ID = 25A RL = 0.4Ω Drain to source breakdown voltage V(BR)DSS Gate to source breakdown voltage V(BR)GSS Zero gate voltege drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state resistance Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body–drain diode forward voltage Body–drain diode reverse recovery time Note: 3. Pulse test I DSS I GSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr
2
2SK2956
Main Characteristics
Power vs. Temperature Derating 40 1000 300
Pch (W) I D (A)
Maximum Safe Operation Area
10
PW =
30
100 30 10 3 1 0.3
DC
Drain Current
Channel Dissipation
Op
10
0 1 m µs m s
s( 1s ho t)
10
µs
20
era
tio
n(
Tc
10
Operation in this area is limited by R DS(on)
=2
5°
C)
0
50
100
150
200
Case Temperature Tc (°C)
0.1 Ta = 25°C 3 0.1 0.3 1 10 Drain to Source Voltage V
30 (V) DS
100
50
Typical Output Characteristics 10 V 5 V 4V 3.5 V Pulse Test
I D (A)
Typical Transfer Characteristics 50 V DS = 10 V Pulse Test
40
I D (A)
40
3V 30
30 25°C 75°C 10 Tc = –25°C
Drain Current
20 2.5 V 10 VGS = 2 V 0 2 4 6 Drain to Source Voltage V 8 (V) DS 10
Drain Current
20
0
1 2 3 Gate to Source Voltage V
4 (V) GS
5
3
2SK2956
Drain to Source Saturation Voltage vs. Gate to Source Voltage Static Drain to Source on State Resistance vs. Drain Current 500 Pulse Test 500 100 50 20 VGS = 4 V 10 5 1 2 50 100 200 5 10 20 Drain Current I D (A) 10 V
Drain to Source Saturation Voltage V DS(on) (V)
Pulse Test
0.4
0.3
0.2 I D = 20 A 0.1 10 A 5A 12 4 8 Gate to Source Voltage 16 20 V GS (V)
0
Drain to.