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2SK2956 Dataheets PDF



Part Number 2SK2956
Manufacturers Hitachi Semiconductor
Logo Hitachi Semiconductor
Description Silicon N-Channel MOSFET
Datasheet 2SK2956 Datasheet2SK2956 Datasheet (PDF)

2SK2956 Silicon N Channel MOS FET High Speed Power Switching ADE-208-566B (Z) 3rd. Edition Jun 1998 Features • Low on-resistance R DS(on) = 7mΩ typ. • 4V gate drive devices. • High speed switching Outline TO–220CFM D G 1 2 3 S 1. Gate 2. Drain 3. Source 2SK2956 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: 1. .

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2SK2956 Silicon N Channel MOS FET High Speed Power Switching ADE-208-566B (Z) 3rd. Edition Jun 1998 Features • Low on-resistance R DS(on) = 7mΩ typ. • 4V gate drive devices. • High speed switching Outline TO–220CFM D G 1 2 3 S 1. Gate 2. Drain 3. Source 2SK2956 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C Symbol VDSS VGSS ID I D(pulse) I DR Pch Tch Tstg Note2 Note1 Ratings 30 ±20 50 200 50 35 150 –55 to +150 Unit V V A A A W °C °C Electrical Characteristics (Ta = 25°C) Item Symbol Min 30 ±20 — — 1.0 — — 25 — — — — — — — — — Typ — — — — — 7.0 12 45 2000 1500 350 20 330 190 190 0.95 60 Max — — 10 ±10 2.0 10 18 — — — — — — — — — — Unit V V µA µA V mΩ mΩ S pF pF pF ns ns ns ns V ns I F = 50A, VGS = 0 I F = 50A, VGS = 0 diF/ dt =50A/µs Test Conditions I D = 10mA, VGS = 0 I G = ±100µA, VDS = 0 VDS = 30 V, VGS = 0 VGS = ±16V, VDS = 0 I D = 1mA, VDS = 10V I D = 25A, VGS = 10V Note3 I D = 25A, VGS = 4V Note3 I D = 25A, VDS = 10V Note3 VDS = 10V VGS = 0 f = 1MHz VGS = 10V, ID = 25A RL = 0.4Ω Drain to source breakdown voltage V(BR)DSS Gate to source breakdown voltage V(BR)GSS Zero gate voltege drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state resistance Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body–drain diode forward voltage Body–drain diode reverse recovery time Note: 3. Pulse test I DSS I GSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 2 2SK2956 Main Characteristics Power vs. Temperature Derating 40 1000 300 Pch (W) I D (A) Maximum Safe Operation Area 10 PW = 30 100 30 10 3 1 0.3 DC Drain Current Channel Dissipation Op 10 0 1 m µs m s s( 1s ho t) 10 µs 20 era tio n( Tc 10 Operation in this area is limited by R DS(on) =2 5° C) 0 50 100 150 200 Case Temperature Tc (°C) 0.1 Ta = 25°C 3 0.1 0.3 1 10 Drain to Source Voltage V 30 (V) DS 100 50 Typical Output Characteristics 10 V 5 V 4V 3.5 V Pulse Test I D (A) Typical Transfer Characteristics 50 V DS = 10 V Pulse Test 40 I D (A) 40 3V 30 30 25°C 75°C 10 Tc = –25°C Drain Current 20 2.5 V 10 VGS = 2 V 0 2 4 6 Drain to Source Voltage V 8 (V) DS 10 Drain Current 20 0 1 2 3 Gate to Source Voltage V 4 (V) GS 5 3 2SK2956 Drain to Source Saturation Voltage vs. Gate to Source Voltage Static Drain to Source on State Resistance vs. Drain Current 500 Pulse Test 500 100 50 20 VGS = 4 V 10 5 1 2 50 100 200 5 10 20 Drain Current I D (A) 10 V Drain to Source Saturation Voltage V DS(on) (V) Pulse Test 0.4 0.3 0.2 I D = 20 A 0.1 10 A 5A 12 4 8 Gate to Source Voltage 16 20 V GS (V) 0 Drain to.


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