2SK2964

2SK2964 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2−π−MOSVI) 2SK2964 Chopper Regulators, DC−DC Converters and Motor DriveApplications z 4-V gate drive z Low drain-source ON-resistance: RDS (ON) = 0.13 Ω (typ.) z High forward transfer admittance: |Yfs| = 2.5 S (typ.) z Low leakage current: IDSS = 100 μA (max) (VDS = 30 V) z Enhancement mode: Vth = 0.8 to 2.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC (Note 1) Pulse (Note 1) Drain power dissipation Drain power dissipation (Note 2) Single pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy (Note 4) Channel temperature Storage temperature range VDSS VDGR VGSS ID IDP PD PD EAS IAR EAR Tch Tstg 30 30 ±20 2 6 0.5 1.5 56 2 0.05 150 −55 to 150 V V V A A W W mJ A mJ °C °C JEDEC ⎯ JEITA ⎯ TOSHIBA 2-5K1B Weight: 0.05 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Me...