2SK2968
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII)
2SK2968
DC−DC Converter, Relay Drive and ...
2SK2968
TOSHIBA Field Effect
Transistor Silicon N Channel MOS Type (π−MOSIII)
2SK2968
DC−DC Converter, Relay Drive and Motor Drive Applications
l Low drain−source ON resistance l High forward transfer admittance : RDS (ON) = 1.05 Ω (typ.) : |Yfs| = 7.6 S (typ.) Unit: mm
l Low leakage current : IDSS = 100 µA (max) (VDS = 720 V) l Enhancement−mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 900 900 ±30 10 30 150 810 10 15 150 −55~150 Unit V V V A A W mJ A mJ °C °C 1. GATE 2. DRAIN (HEAT SINK) 3. SOURCE
Pulse (Note 1)
Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range
JEDEC JEITA TOSHIBA
― ― 2-16C1B
Weight: 4.6 g (typ.)
Thermal Characteristics
Characteristics Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch−c) Rth (ch−a) Max 0.833 50 Unit °C / W °C / W
Note 1: Please use devices on condition that the channel temperature is below 150°C. Note 2: VDD = 90 V, Tch = 25°C (initial), L = 14.9 mH, RG = 25 Ω, IAR = 10 A Note 3: Repetitive rating: Pulse width limited by maximum channel temperature This
transistor is an electrostatic sensitive device. Please handle with caution.
1
2002-07-31
2SK2968
Electrical Char...