2SK2978

2SK2978 Silicon N Channel MOS FET High Speed Power Switching ADE-208-659B (Z) 3rd. Edition Jun 1998 Features Low on-resistance R DS(on) = 0.09 Ω typ. (V GS = 4 V, ID = 1.5 A) Low drive current High speed switching 2.5V gate drive devices. Outline UPAK 3 D 2 1 4 G 1. Gate 2. Drain 3. Source 4. Drain S 2SK2978 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID I D(pulse) Note1 Ratings 20 ±10 2.5 5 2.5 Unit V V A A A W °C °C Body-drain diode reverse drain current I DR Channel dissipation Channel temperature Storage temperature Note: Pch Tch Tstg Note2 1 150 –55 to +150 1. PW ≤ 10µs, duty cycle ≤ 1 % 2. When using the alumina ceramic board (12.5 x 20 x 0.7 mm) Electrical Characteristics (Ta = 25°C) Item Symbol Min 20 ±10 — — 0.5 — — 3.0 — — — — — — — — — Typ — — — — — 0.09 0.12 5.0 260 150 75 15 70 55 70 0.9 75 Max — — 10 ±10 1.5 0.12 0.20 — — — — — — — — — — Unit V V µA µA V Ω Ω S pF pF pF ns ns ns ns V ns I F = 2.5A, VGS = 0 I F = 2.5A, VGS = 0 diF/ dt =50A/µs Test Conditions I D = 10mA, VGS = 0 I G = ±100µA, VDS = 0 VDS = 20 V, VGS = 0 VGS = ±8V, VDS = 0 I D = 1mA, VDS = 10V I D = 1.5A, VGS = 4V Note3 I D = 1.5A, VGS = 2.5V Note3 I D = 1.5A, VDS = 10V Note3 VDS = 10V VGS = 0 f = 1MHz VGS = 4V, I D = 1.5A RL = 6.67 Ω Drain to source breakdown voltage V(BR)DSS Gate to source breakdown voltage V(BR)GSS Zero gate voltege drain current Gate to source leak current Gate to...