2SK2986

2SK2986 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOSII) 2SK2986 DC−DC Converter, Relay Drive and Motor Drive Applications Unit: mm z Low drain−source ON resistance : RDS (ON) = 4.5 mΩ (typ.) z High forward transfer admittance : |Yfs| = 80 S (typ.) z Low leakage current : IDSS = 100 μA (max) (VDS = 60 V) z Enhancement mode : Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage DC (Note 1) Drain current Pulse (t≤10 s) (Note 1) Pulse (t≤1 ms) (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg 60 60 ±20 55 70 280 100 525 55 10 150 −55 to 150 V V V A W mJ A mJ °C °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report a...