2SK2987

2SK2987 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOSII) 2SK2987 DC−DC Converter, Relay Drive and Motor Drive Applications Unit: mm l Low drain−source ON resistance : RDS (ON) = 4.5 mΩ (typ.) l High forward transfer admittance : |Yfs| = 80 S (typ.) l Low leakage current : IDSS = 100 µA (max) (VDS = 60 V) l Enhancement−mode : Vth = 1.3~2.5 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25°C) Characteristics Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC (Note 1) Pulse (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 60 60 ±20 70 280 150 490 70 15 150 −55~150 Unit V V V A W mJ A mJ °C °C 1. GATE 2. DRAIN (HEAT SINK) 3. SOURCE JEDEC ― JEITA ― TOSHIBA 2-16C1B Weight: 4.6 g (typ.) Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to case Thermal resistance, channel to ambient Rth (ch−c) Rth (ch−a) 0.833 50 °C / W °C / W Note 1: Please use devices on condition that the channel temperature is below 150°C. Note 2: VDD = 25 V, Tch = 25°C (initial), L = 136 µH, IAR = 70 A, RG = 25 Ω Note 3: Repetitive rating: Pulse width limited by maximum channel temperature This transistor is an electrostatic sensitive device. Please handle with caution. 1 2002-06-27 Electri...