2SK2998

2SK2998 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) 2SK2998 Chopper Regulator, DC−DC Converter Applications Unit: mm z Low drain−source ON-resistance : RDS (ON) = 11.5 Ω (typ.) z High forward transfer admittance : |Yfs| = 0.4 S (typ.) z Low leakage current : IDSS = 100 μA (max) (VDS = 500 V) z Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain−source voltage VDSS 500 V Drain−gate voltage (RGS = 20 kΩ) VDGR 500 V Gate−source voltage VGSS ±30 V Drain current DC (Note 1) Pulse (Note 1) ID IDP 0.5 A 1.5 A Drain power dissipation PD 0.9 W Channel temperature Storage temperature range Tch 150 °C Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high JEDEC TO-92MOD temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, JEITA TOSHIBA — 2-5J1C etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Weight: 0.36 g (typ.) Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Symbol Max Unit Thermal...