2SK3018

Transistor 2.5V Drive Nch MOS FET 2SK3018 2SK3018 zStructure Silicon N-channel MOSFET zApplications Interfacing, switching (30V, 100mA) zFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Low voltage drive (2.5V) makes this device ideal for portable equipment. 4) Drive circuits can be simple. 5) Parallel use is easy. zExternal dimensions (Unit : mm) UMT3 2.0 0.3 (3) 0.9 0.2 0.7 1.25 2.1 0.1Min. (1) Source (2) Gate (3) Drain (2) (1) 0.65 0.65 1.3 0.15 Each lead has same dimensions Abbreviated symbol : KN zPackaging specifications Package Type Code Basic ordering unit (pieces) 2SK3018 Taping T106 3000 zEquivalent circuit Drain Gate zAbsolute maximum ratings (Ta=25°C) Parameter Symbol Drain-source voltage VDSS Gate-source voltage VGSS Drain current Continuous Pulsed Total power dissipation ID IDP∗1 PD∗2 Channel temperature Tch Storage temperature Tstg ∗1 Pw≤10µs, Duty cycle≤1% ∗2 With each pin mounted on the recommended lands. Limits 30 ±20 ±100 ±400 200 150 −55 to +150 Unit V V mA mA mW °C °C ∗ Gate Protection Diode Source ∗A protection diode is included between the gate and the source terminals to protect the diode against static electricity when the product is in use. Use a protection circuit when the fixed voltages are exceeded. zThermal resistance Parameter Channel to ambient ∗ With each pin mounted on the recommended lands. Symbol Rth(ch-a) ∗ Limits 625 Unit °C / W Rev.B 1/3 Transistor zElectrical characteristics (T...