2SK3027

Power F-MOS FETs 2SK3027 (Tentative) Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed q High-speed switching q Low ON-resistance q No secondary breakdown q Low-voltage drive q High electrostatic breakdown voltage unit: mm 4.6±0.2 φ3.2±0.1 9.9±0.3 2.9±0.2 4.1±0.2 8.0±0.2 Solder Dip 13.7–0.2 q Contactless relay q Diving circuit for a solenoid q Driving circuit for a motor q Control equipment q Switching power supply 15.0±0.3 3.0±0.2 s Applications +0.5 1.2±0.15 1.45±0.15 0.75±0.1 2.54±0.2 5.08±0.4 1 2 3 2.6±0.1 0.7±0.1 s Absolute Maximum Ratings (TC = 25°C) Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current DC Pulse Symbol VDSS VGSS ID IDP EAS* PD Tch Tstg Ratings 60 ±20 ±50 ±100 125 60 2 150 −55 to +150 Unit V V A A mJ 7 1: Gate 2: Drain 3: Source TO-220E Package (a) Avalanche energy capacity Allowable power dissipation Channel temperature Storage temperature * TC = 25°C Ta = 25°C Internal Connection W °C °C S G D L = 0.1mH, IL = 50A, 1 pulse s Electrical Characteristics (TC = 25°C) Parameter Drain to Source cut-off current Gate to Source leakage current Drain to Source breakdown voltage Gate threshold voltage Drain to Source ON-resistance Forward transfer admittance Diode forward voltage Symbol IDSS IGSS VDSS Vth RDS(on)1 RDS(on)2 | Yfs | VDSF Coss td(on) tr tf td(off) Rth(ch-c) Rth(ch-a) VDD = 30V, ID = 25A VGS = 10V, RL = 1.2Ω Conditions VDS = 50V, VGS = 0 VGS = ±20V, VDS = 0 ID = 1mA, VGS = ...