Document
Power F-MOS FETs
2SK3044
Silicon N-Channel Power F-MOS FET
s Features
q Avalanche energy capacity guaranteed: EAS > 130mJ q VGSS = ±30V guaranteed q High-speed switching: tf = 50ns q No secondary breakdown
unit: mm
9.9±0.3 4.6±0.2 2.9±0.2
s Applications
q Contactless relay q Diving circuit for a solenoid q Driving circuit for a motor q Control equipment q Switching power supply
15.0±0.5
φ3.2±0.1
13.7±0.2 4.2±0.2
1.4±0.2 1.6±0.2 0.8±0.1
3.0±0.5
2.6±0.1
0.55±0.15
s Absolute Maximum Ratings (TC = 25°C)
Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current DC Pulse Symbol VDSS VGSS ID IDP EAS* PD Tch Tstg Ratings 450 ±30 ±7 ±14 100 40 2 150 −55 to +150 Unit V V A A mJ W °C °C
1 2
2.54±0.3 3 5.08±0.5
1: Gate 2: Drain 3: Source TO-220D Package
Avalanche energy capacity Allowable power dissipation Channel temperature Storage temperature
*
TC = 25°C Ta = 25°C
L = 4.1mH, IL = 8A, VDD = 50V, 1 pulse
s Electrical Characteristics (TC = 25°C)
Parameter Drain to Source cut-off current Gate to Source leakage current Drain to Source breakdown voltage Gate threshold voltage Drain to Source ON-resistance Forward transfer admittance Diode forward voltage Symbol IDSS IGSS VDSS Vth RDS(on) | Yfs | VDSF Coss td(on) tr td(off) tf VGS = 10V, ID = 4A VDD = 150V, RL = 37.5Ω Conditions VDS = 360V, VGS = 0 VGS = ±30V, VDS = 0 ID = 1mA, VGS = 0 VDS = 25V, ID = 1mA VGS = 10V, ID = 4A VDS = 25V, ID = 4A IDR = 8A, VGS = 0 1300 VDS = 20V, VGS = 0, f = 1MHz 160 70 25 45 150 50 3 450 2 0.56 5 −1.7 5 0.75 min typ max 0.1 ±1 Unit mA µA V V Ω S V pF pF pF ns ns ns ns
Input capacitance (Common Source) Ciss Output capacitance (Common Source) Reverse transfer capacitance (Common Source) Crss Turn-on time (delay time) Rise time Turn-off time (delay time) Fall time
1
Power F-MOS FETs
Area of safe operation (ASO)
100 30 10 3 1 0.3 10ms 0.1 100ms 0.03 0.01 1 3 10 30 100 300 1000 DC 100µs 1ms 60
2SK3044
PD Ta
100
EAS Tj
Avalanche energy capacity EAS (mJ)
Allowable power dissipation PD (W)
Non repetitive pulse TC=25˚C t=10µs
(1) TC=Ta (2) Without heat sink 50
80
Drain current ID (A)
40 (1) 30
60
40
20
10 (2) 0 0 20 40 60 80 100 120 140 160
20
0 25
50
75
100
125
150
175
Drain to source voltage VDS (V)
Ambient temperature Ta (˚C)
Junction temperature Tj (˚C)
ID VDS
16 14 12 10 8 6V 6 4 2 0 0 10 20 30 40 50 60 5.5V VGS=15V 10V 8 TC=25˚C 10
ID VGS
6 VDS=25V 25˚C 100˚C
Vth TC
VDS=25V ID=1mA 5
Drain current ID (A)
Drain current ID (A)
7V
TC=0˚C
150˚C
Gate threshold voltage Vth (V)
10 12
4
6
3
4
2
2 5V 50W 0 0 2 4 6 8
1
0 0 25 50 75 100 125 150
Drain to source voltage VDS (V)
Gate to source voltage VGS (V)
Case temperature TC (˚C)
RDS(on) ID
Drain to source ON-resistance RDS(on) (Ω)
VGS=10V 2.0
RDS(on) ID
Drain to source ON-resistance RDS(on) (Ω)
2.4 12
| Yfs | ID
Forward transfer admittance |Yfs| (S)
TC=25˚C VDS=25V TC=25˚C 10
2.4
2.0
1.6 TC=150˚C 100˚C 0.8 25˚C 0.4 0˚C
1.6
8
1.2
1.2
.