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2SK3044 Dataheets PDF



Part Number 2SK3044
Manufacturers Panasonic Semiconductor
Logo Panasonic Semiconductor
Description Silicon N-Channel Power F-MOS FET
Datasheet 2SK3044 Datasheet2SK3044 Datasheet (PDF)

Power F-MOS FETs 2SK3044 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed: EAS > 130mJ q VGSS = ±30V guaranteed q High-speed switching: tf = 50ns q No secondary breakdown unit: mm 9.9±0.3 4.6±0.2 2.9±0.2 s Applications q Contactless relay q Diving circuit for a solenoid q Driving circuit for a motor q Control equipment q Switching power supply 15.0±0.5 φ3.2±0.1 13.7±0.2 4.2±0.2 1.4±0.2 1.6±0.2 0.8±0.1 3.0±0.5 2.6±0.1 0.55±0.15 s Absolute Maximum Ratin.

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Power F-MOS FETs 2SK3044 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed: EAS > 130mJ q VGSS = ±30V guaranteed q High-speed switching: tf = 50ns q No secondary breakdown unit: mm 9.9±0.3 4.6±0.2 2.9±0.2 s Applications q Contactless relay q Diving circuit for a solenoid q Driving circuit for a motor q Control equipment q Switching power supply 15.0±0.5 φ3.2±0.1 13.7±0.2 4.2±0.2 1.4±0.2 1.6±0.2 0.8±0.1 3.0±0.5 2.6±0.1 0.55±0.15 s Absolute Maximum Ratings (TC = 25°C) Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current DC Pulse Symbol VDSS VGSS ID IDP EAS* PD Tch Tstg Ratings 450 ±30 ±7 ±14 100 40 2 150 −55 to +150 Unit V V A A mJ W °C °C 1 2 2.54±0.3 3 5.08±0.5 1: Gate 2: Drain 3: Source TO-220D Package Avalanche energy capacity Allowable power dissipation Channel temperature Storage temperature * TC = 25°C Ta = 25°C L = 4.1mH, IL = 8A, VDD = 50V, 1 pulse s Electrical Characteristics (TC = 25°C) Parameter Drain to Source cut-off current Gate to Source leakage current Drain to Source breakdown voltage Gate threshold voltage Drain to Source ON-resistance Forward transfer admittance Diode forward voltage Symbol IDSS IGSS VDSS Vth RDS(on) | Yfs | VDSF Coss td(on) tr td(off) tf VGS = 10V, ID = 4A VDD = 150V, RL = 37.5Ω Conditions VDS = 360V, VGS = 0 VGS = ±30V, VDS = 0 ID = 1mA, VGS = 0 VDS = 25V, ID = 1mA VGS = 10V, ID = 4A VDS = 25V, ID = 4A IDR = 8A, VGS = 0 1300 VDS = 20V, VGS = 0, f = 1MHz 160 70 25 45 150 50 3 450 2 0.56 5 −1.7 5 0.75 min typ max 0.1 ±1 Unit mA µA V V Ω S V pF pF pF ns ns ns ns Input capacitance (Common Source) Ciss Output capacitance (Common Source) Reverse transfer capacitance (Common Source) Crss Turn-on time (delay time) Rise time Turn-off time (delay time) Fall time 1 Power F-MOS FETs Area of safe operation (ASO) 100 30 10 3 1 0.3 10ms 0.1 100ms 0.03 0.01 1 3 10 30 100 300 1000 DC 100µs 1ms 60 2SK3044 PD  Ta 100 EAS  Tj Avalanche energy capacity EAS (mJ) Allowable power dissipation PD (W) Non repetitive pulse TC=25˚C t=10µs (1) TC=Ta (2) Without heat sink 50 80 Drain current ID (A) 40 (1) 30 60 40 20 10 (2) 0 0 20 40 60 80 100 120 140 160 20 0 25 50 75 100 125 150 175 Drain to source voltage VDS (V) Ambient temperature Ta (˚C) Junction temperature Tj (˚C) ID  VDS 16 14 12 10 8 6V 6 4 2 0 0 10 20 30 40 50 60 5.5V VGS=15V 10V 8 TC=25˚C 10 ID  VGS 6 VDS=25V 25˚C 100˚C Vth  TC VDS=25V ID=1mA 5 Drain current ID (A) Drain current ID (A) 7V TC=0˚C 150˚C Gate threshold voltage Vth (V) 10 12 4 6 3 4 2 2 5V 50W 0 0 2 4 6 8 1 0 0 25 50 75 100 125 150 Drain to source voltage VDS (V) Gate to source voltage VGS (V) Case temperature TC (˚C) RDS(on)  ID Drain to source ON-resistance RDS(on) (Ω) VGS=10V 2.0 RDS(on)  ID Drain to source ON-resistance RDS(on) (Ω) 2.4 12 | Yfs |  ID Forward transfer admittance |Yfs| (S) TC=25˚C VDS=25V TC=25˚C 10 2.4 2.0 1.6 TC=150˚C 100˚C 0.8 25˚C 0.4 0˚C 1.6 8 1.2 1.2 .


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