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2SK3047 Dataheets PDF



Part Number 2SK3047
Manufacturers Panasonic Semiconductor
Logo Panasonic Semiconductor
Description Silicon N-Channel Power F-MOS FET
Datasheet 2SK3047 Datasheet2SK3047 Datasheet (PDF)

Power F-MOS FETs 2SK3047 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed: EAS > 15mJ q VGSS = ±30V guaranteed q High-speed switching: tf = 25ns q No secondary breakdown unit: mm 9.9±0.3 4.6±0.2 2.9±0.2 s Applications q Contactless relay q Diving circuit for a solenoid q Driving circuit for a motor q Control equipment q Switching power supply 15.0±0.5 φ3.2±0.1 13.7±0.2 4.2±0.2 1.4±0.2 1.6±0.2 0.8±0.1 3.0±0.5 2.6±0.1 0.55±0.15 s Absolute Maximum Rating.

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Power F-MOS FETs 2SK3047 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed: EAS > 15mJ q VGSS = ±30V guaranteed q High-speed switching: tf = 25ns q No secondary breakdown unit: mm 9.9±0.3 4.6±0.2 2.9±0.2 s Applications q Contactless relay q Diving circuit for a solenoid q Driving circuit for a motor q Control equipment q Switching power supply 15.0±0.5 φ3.2±0.1 13.7±0.2 4.2±0.2 1.4±0.2 1.6±0.2 0.8±0.1 3.0±0.5 2.6±0.1 0.55±0.15 s Absolute Maximum Ratings (TC = 25°C) Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current DC Pulse Symbol VDSS VGSS ID IDP EAS* PD Tch Tstg Ratings 800 ±30 ±2 ±4 15 30 2 150 −55 to +150 Unit V V A A mJ W °C °C 1 2 2.54±0.3 3 5.08±0.5 1: Gate 2: Drain 3: Source TO-220D Package Avalanche energy capacity Allowable power dissipation Channel temperature Storage temperature * TC = 25°C Ta = 25°C L = 5mH, IL = 2.45A, VDD = 50V, 1 pulse s Electrical Characteristics (TC = 25°C) Parameter Drain to Source cut-off current Gate to Source leakage current Drain to Source breakdown voltage Gate threshold voltage Drain to Source ON-resistance Forward transfer admittance Diode forward voltage Symbol IDSS IGSS VDSS Vth RDS(on) | Yfs | VDSF Coss td(on) tr td(off) tf VGS = 10V, ID = 1A VDD = 200V, RL = 200Ω Conditions VDS = 640V, VGS = 0 VGS = ±30V, VDS = 0 ID = 1mA, VGS = 0 VDS = 25V, ID = 1mA VGS = 10V, ID = 1A VDS = 25V, ID = 1A IDR = 2A, VGS = 0 350 VDS = 20V, VGS = 0, f = 1MHz 60 25 15 20 60 25 0.7 800 2 4.8 1.1 −1.3 5 7 min typ max 0.1 ±1 Unit mA µA V V Ω S V pF pF pF ns ns ns ns Input capacitance (Common Source) Ciss Output capacitance (Common Source) Reverse transfer capacitance (Common Source) Crss Turn-on time (delay time) Rise time Turn-off time (delay time) Fall time 1 Power F-MOS FETs Area of safe operation (ASO) 100 30 10 t =10µs 3 1 0.3 0.1 0.03 0.01 1 3 10 30 100 300 1000 100µs 1ms DC 10ms 100ms 60 2SK3047 PD  Ta 30 EAS  Tj Avalanche energy capacity EAS (mJ) VDD=50V ID=2A 25 Allowable power dissipation PD (W) Non repetitive pulse TC=25˚C (1) TC=Ta (2) Without heat sink 50 Drain current ID (A) 40 20 30 (1) 20 15 10 10 (2) 0 0 20 40 60 80 100 120 140 160 5 0 25 50 75 100 125 150 175 Drain to source voltage VDS (V) Ambient temperature Ta (˚C) Junction temperature Tj (˚C) ID  VDS 4 TC=25˚C VGS=15V 4 5 ID  VGS 6 VDS=25V Vth  TC VDS=25V ID=1mA 5 Drain current ID (A) Drain current ID (A) 3 10V Gate threshold voltage Vth (V) 10 12 TC=0˚C 25˚C 100˚C 125˚C 4 7V 2 6.5V 6V 1 5.5V 5V 0 0 10 20 30 40 50 60 3 3 2 2 1 1 0 0 2 4 6 8 0 0 25 50 75 100 125 150 Drain to source voltage VDS (V) Gate to source voltage VGS (V) Case temperature TC (˚C) RDS(on)  ID Drain to source ON-resistance RDS(on) (Ω) 12 2.0 | Yfs |  ID Forward transfer admittance |Yfs| (S) VDS=25V TC=25˚C Ciss, Coss, Crss  VDS Input capacitance (Common source), Output capacitance (Common source), Reverse transfer capacitance (Common source) Ciss,Coss,Crss (pF) 10000 f=1MHz TC=25˚C 10 1.5 1000 Ciss 8 VGS=10V 15V 4 6 1.0 100 Coss 0.5 10 Crss 2 0 0 1 2 3 4 5 0 0 1 2 3 4 1 0 50 100 150 200 Drain current ID (A) Drain current ID (A) Drain to source voltage VDS (V) 2 Power F-MOS FETs VDS, VGS  Qg 800 16 14 12 10 VDS VGS 8 6 4 2 0 24 120 ID=2A TC=25˚C 2SK3047 td(on), tr, tf, td(off)  ID VDD=200V VGS=10V TC=25˚C Drain to source voltage VDS (V) Gate to source voltage VGS (V) 700 600 500 400 300 200 100 0 0 4 8 12 16 Switching time td(on),tr,tf,td(off) (ns) 100 80 60 td(off) 40 tf tr 20 td(on) 0 0 0.5 1.0 1.5 2.0 2.5 20 Gate charge amount Qg (nC) Drain current ID (A) Rth(t)  t 102 (1) Without heat sink (2) With a 100 × 100 × 2mm Al heat sink (1) Thermal resistance Rth(t) (˚C/W) 10 (2) 1 10–1 10–2 10–4 10–3 10–2 10–1 1 10 102 103 104 Time t (s) 3 .


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