2SK3049

Power F-MOS FETs 2SK3049 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed q High-speed switching q Low ON-resistance q No secondary breakdown unit: mm 9.9±0.3 4.6±0.2 2.9±0.2 s Applications q Contactless relay q Diving circuit for a solenoid q Driving circuit for a motor q Control equipment q Switching power supply 15.0±0.5 φ3.2±0.1 13.7±0.2 4.2±0.2 1.4±0.2 1.6±0.2 0.8±0.1 3.0±0.5 2.6±0.1 0.55±0.15 s Absolute Maximum Ratings (TC = 25°C) Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current DC Pulse Symbol VDSS VGSS ID IDP EAS* PD Tch Tstg Ratings 600 ±30 ±5 ±10 62.5 40 2 150 −55 to +150 Unit V V A A mJ W °C °C 1 2 2.54±0.3 3 5.08±0.5 1: Gate 2: Drain 3: Source TO-220D Package Avalanche energy capacity Allowable power dissipation Channel temperature Storage temperature * TC = 25°C Ta = 25°C L = 5mH, IL = 5A, 1 pulse s Electrical Characteristics (TC = 25°C) Parameter Drain to Source cut-off current Gate to Source leakage current Drain to Source breakdown voltage Gate threshold voltage Drain to Source ON-resistance Forward transfer admittance Diode forward voltage Symbol IDSS IGSS VDSS Vth RDS(on) | Yfs | VDSF Coss td(on) tr td(off) tf VDD = 200V, ID = 3A VGS = 10V, RL = 66.6Ω Conditions VDS = 480V, VGS = 0 VGS = ±30V, VDS = 0 ID = 1mA, VGS = 0 VDS = 25V, ID = 1mA VGS = 10V, ID = 3A VDS = 25V, ID = 3A IDR = 5A, VGS = 0 1200 VDS = 20V, VGS = 0, f = 1MHz 140 40 20 30 150 50 1.7 600 2 0.85 3.4 −1.6 5 1.5 ...