2SK3064

Silicon MOS FETs (Small Signal) 2SK3064 Silicon N-Channel MOS FET Secondary battery pack (Li ion battery, etc.) For switching 0.425 unit: mm 2.1±0.1 1.25±0.1 0.425 0.65 1 q High-speed switching q S-mini type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing. q Low-voltage drive (Vth: −1 to 2V) q Low Ron 2.0±0.2 1.3±0.1 0.65 3 2 0.2 0.9±0.1 0 to 0.1 s Absolute Maximum Ratings (Ta = 25°C) Parameter Drain to Source voltage Gate to Source voltage Drain current Max drain current Allowable power dissipation Channel temperature Storage temperature Symbol VDS VGSO ID IDP PD Tch Tstg Ratings 30 ±20 100 200 150 150 −55 to +150 Unit V V mA mA mW °C °C 1: Gate 2: Source 3: Drain 0.7±0.1 0.2±0.1 EIAJ: SC-70 S-Mini Type Package (3-pin) Marking Symbol: 2D s Electrical Characteristics (Ta = 25°C) Parameter Drain current Gate cut-off current Gate threshold voltage Forward transfer admittance Drain to source ON-resistance Turn-on time Turn-off time Symbol IDSS IGSS Vth | Yfs | RDS(on) ton toff Conditions VDS = 30V, VGS = 0 VGS = ±20V, VDS = 0 VDS = 5V, ID = 1µA VDS = 5V, ID = 10mA VDS = 5V, ID = 10mA VDD = 5V, VGS = 0 to 5V, RL = 200Ω VDD = 5V, VGS = 0 to 5V, RL = 200Ω 1 15 30 150 35 50 min typ max 0.1 ±1 2 Unit µA µA V mS Ω ns ns 0.15–0.05 +0.1 0.3–0 s Features +0.1 1 Silicon MOS FETs (Small Signal) PD  Ta 200 120 2SK3064 ID  VDS 60 | Yfs |  VGS Forward transfer admittance |Yfs| (mS) Ta=25˚C VDS=5V 50 Allowable p...