2SK3065
Transistors
Small switching (60V, 2A)
2SK3065
!Features 1) Low on resistance. 2) High-speed switching. 3) Optim...
2SK3065
Transistors
Small switching (60V, 2A)
2SK3065
!Features 1) Low on resistance. 2) High-speed switching. 3) Optimum for a pocket resource etc. because of undervoltage actuation (2.5V actuation). 4) Driving circuit is easy. 5) Easy to use parallel. 6) It is strong to an electrostatic discharge. !Structure Silicon N-channel MOS FET
transistor !External dimensions (Units : mm)
0.2 4.5+ −0.1 1.6±0.1 1.5±0.1
+0.5 4.0− 0.3 2.5+0.2 −0.1
0.5±0.1
(1)
(2)
(3) 0.4±0.1 1.5±0.1
1.0±0.3
0.1 0.4+ −0.05
0.4±0.1 1.5±0.1
0.5±0.1 3.0±0.2
ROHM : MPT3 E I A J : SC-62
Abbreviated symbol : KE
(1) Gate (2) Drain (3) Source
!Absolute maximum ratings (Ta = 25°C)
Parameter Drain-source voltage Gate-source voltage Continuous Drain current Reverse drain current Pulsed Continuous Pulsed Symbol VDSS VGSS ID IDP∗1 IDR IDRP∗1 PD Tch Tstg Limits 60 ±20 2 8 2 8 0.5 2∗2 150 −55∼+150 Unit V V A A A A W °C °C
!Internal equivalent circuit
Drain
Gate
Total power dissipation(Tc=25°C) Channel temperature Storage temperature
∗Gate Protection Diode
Source
∗1 Pw ≤ 10µs, Duty cycle ≤ 1% ∗2 When mounted on a 40 × 40 × 0.7 mm alumina board.
∗ A protection diode has been built in between the gate and the source to protect against static electricity when the product is in use. Use the protection circuit when rated voltages are exceeded.
!Electrical characteristics (Ta = 25°C)
Parameter Gate-source leakage Drain-source breakdown voltage Zero gate voltage drain current Gate threshold voltage Static ...
