2SK3070L

2SK3070(L),2SK3070(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-684G (Z) 8th. Edition February 1999 Features Low on-resistance R DS(on) = 4.5 mΩ typ. Low drive current 4 V gate drive device can be driven from 5 V source Outline LDPAK 4 4 D 1 1 2 3 G 2 3 1. Gate 2. Drain 3. Source 4. Drain S Datasheet Title Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR I AP EAR Pch Tch Tstg Note 3 Note 3 Note 2 Note 1 Ratings 40 ±20 75 300 75 50 333 100 150 –55 to +150 Unit V V A A A A mJ W °C °C 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω 2 Datasheet Title Electrical Characteristics (Ta = 25°C) Item Symbol Min 40 — — 1.0 — — |yfs| Ciss Coss Crss Qg Qgs Qgd t d(on) tr t d(off) tf VDF t rr 50 — — — — — — — — — — — — Typ — — — — 4.5 6.5 80 6800 1300 380 130 25 30 60 300 550 400 1.05 90 Max — ±0.1 10 2.5 5.8 10 — — — — — — — — — — — — — Unit V µA µA V mΩ mΩ S pF pF pF nc nc nc ns ns ns ns V ns I F = 75 A, VGS = 0 I F = 75 A, VGS = 0 diF/ dt = 50 A/ µs Test Conditions I D = 10 mA, VGS = 0 VGS = ±20 V, VDS = 0 VDS = 40 V, VGS = 0 I D = 1 mA, VDS = 10 V Note1 I D = 40 A, VGS = 10 V Note1 I D = 40 A, VGS = 4 V Note1 I D = 40 A, VDS = 10 V Note1 VDS = 10 V VGS = 0 f = 1 M...