2SK3074

2SK3074 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3074 RF POWER MOSFET FOR VHF−AND UHF-BAND POWER AMPLIFIER (Note)The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA products are neither intended nor warranted for any other use.Do not use these TOSHIBA products listed in this document except for high frequency Power Amplifier of telecommunications equipment. Unit: mm z Output Power z Power Gain z Drain Efficiency : PO ≥ 630mW : GP ≥ 14.9dB : ηD ≥ 45% ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Characteristics Symbol Rating Unit Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS 25 V Drain Current ID 1 A Drain Power Dissipation Channel Temperature PD (Note 1) Tch 3 150 W JEDEC °C JEITA — SC−62 Storage Temperature Range Tstg −45 to 150 °C TOSHIBA 2−5K1D Note: Using continuously under heavy loads (e.g. the application of high Weight: 0.05 g (typ.) temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimate...