2SK3079A

2SK3079A Preliminary TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK3079A 470 MHz Band Amplifier Applications Unit: mm Output power: Po = 33.50dBmW (2.2 W) (min) Gain: Gp = 13.50dB (min) Drain Efficiency: ηD = 50.0% (min) · · · Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate-source voltage Drain current Power dissipation Channel temperature Storage temperature range Symbol VDSS VGSS ID PD (Note 1) Tch Tstg Rating 10 3 3 20.0 150 −45~150 Unit V V A W °C °C Note 1: Tc = 25°C JEDEC ― ― 2-5N1A Marking Type Name JEITA TOSHIBA UD Dot F ** Lot No. Electrical Characteristics (Ta = 25°C) Characteristics Output power Drain efficiency Power gain Threshold voltage Drain cut-off current Gate-source leakage current Symbol PO ηD Gp Vth IDSS IGSS (Note 2) ¾ Test Condition VDS = 4.5 V, Iidle = 50 mA (VGS = adjust) f = 470 MHz, Pi = 20dBmW ZG = ZL = 50 Ω VDS = 4.5 V, ID = 0.5 mA VDS = 10 V, VGS = 0 V VGS = 5 V, VDS = 0 V VDS = 5 V, f = 470 MHz, Pi = 20dBmW, Po = 33.5dBmW (VGS = adjust) VSWR LOAD 10:1 all phase Min 33.5 50.0 13.5 ¾ ¾ ¾ Typ. ¾ ¾ ¾ 0.8 ¾ ¾ Max ¾ ¾ ¾ ¾ 10 5 Unit dBmW % dB V µA µA ¾ Load mismatch No degradation Caution: This is transistor the electrostatic sensitive device. Please handle with caution. Note 2: When the RF output power test fixture is used 1 2002-01-09 2SK3079A Test Circuit Pi ZG = 50 W 20 pF L1 20 pF 10000 pF 2200 pF 3.3 W 2200 pF 2200 pF Po ZL = 50 W 13 pF 20 pF 10 mF VDS L2 680 kW VGS 10000 pF 2 2002-01-09 ...