2SK3082

2SK3082(L),2SK3082(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-637 (Z) 2nd. Edition May 1998 Features Low on-resistance RDS(on) = 0.055 Ω typ. High speed switching 4V gate drive device can be driven from 5V source Outline LDPAK 4 4 1 1 2 3 2 3 1. Gate 2. Drain 3. Source 4. Drain 2SK3082(L),2SK3082(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID I D(pulse) Note1 Ratings 60 ±20 10 40 10 Unit V V A A A A mJ W °C °C Body-drain diode reverse drain current I DR Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: I AP Note3 Note3 Note2 10 8.5 30 150 –55 to +150 EAR Pch Tch Tstg 1. PW ≤ 10µs, duty cycle ≤ 1 % 2. Value at Tc = 25° C 3. Value at Tch = 25° C, Rg ≥ 50Ω Electrical Characteristics (Ta = 25°C) Item Symbol Min 60 ±20 — — 1.5 — — 5 — — — — — — — — — Typ — — — — — 0.055 0.090 8 350 190 70 10 55 60 70 0.9 50 Max — — ±10 10 2.5 0.075 0.150 — — — — — — — — — — Unit V V µA µA V Ω Ω S pF pF pF ns ns ns ns V ns I F = 10A, VGS = 0 I F = 10A, VGS = 0 diF/ dt =50A/µs Test Conditions I D = 10mA, VGS = 0 I G = ±100µA, VDS = 0 VGS = ±16V, VDS = 0 VDS = 60 V, VGS = 0 I D = 1mA, VDS = 10V I D = 5A, VGS = 10VNote4 I D = 5A, VGS = 4V Note4 I D = 5A, VDS = 10V Note4 VDS = 10V VGS = 0 f = 1MHz I D = 5A, VGS = 10V RL = 6Ω Drain to source breakdown voltage V(BR)DSS Gate to source breakdown voltage V(BR)GSS Gate...