2SK3090

2SK3090 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSVI) 2SK3090 Chopper Regulator DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 16 mΩ (typ.) z High forward transfer admittance : |Yfs| = 26 S (typ.) z Low leakage current : IDSS = 100 μA (max) (VDS = 30 V) z Enhancement mode : Vth = 1.5 to 3.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC (Note 1) Pulse (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 30 30 ±20 45 135 60 220 45 6 150 −55 to 150 Unit V V V A W mJ A mJ °C °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Chara...