DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3105
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
DESCRIPTION
The 2S...
DATA SHEET
MOS FIELD EFFECT
TRANSISTOR
2SK3105
N-CHANNEL MOS FIELD EFFECT
TRANSISTOR FOR SWITCHING
DESCRIPTION
The 2SK3105 is a switching device which can be driven directly by a 4 V power source. The 2SK3105 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on.
PACKAGE DRAWING (Unit : mm)
0.4 +0.1 –0.05 0.16+0.1 –0.06
0.65–0.15
+0.1
2.8 ±0.2
3
1.5
0 to 0.1
1 2
FEATURES
Can be driven by a 4 V power source Low on-state resistance RDS(on)1 = 95 mΩ MAX. (VGS = 10 V, ID = 1.5 A) RDS(on)2 = 135 mΩ MAX. (VGS = 4.5 V, ID = 1.5 A) RDS(on)3 = 150 mΩ MAX. (VGS = 4.0 V, ID = 1.5 A)
0.95
0.95
0.65 0.9 to 1.1
1.9 2.9 ±0.2 1 : Gate 2 : Source 3 : Drain
ORDERING INFORMATION
PART NUMBER 2SK3105 PACKAGE 3-pin Mini Mold (Thin Type)
EQUIVALENT CIRCUIT
Drain
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse)
Note1
VDSS VGSS ID(DC) ID(pulse) PT1
Note2
30 ±20 ±2.5 ±10 0.2 1.25 150 –55 to +150
V V A A W W °C °C
Gate
Body Diode
Total Power Dissipation Total Power Dissipation Channel Temperature Storage Temperature Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1 % 2. Mounted on FR4 Board, t ≤ 5 sec. Remark
Gate Protection Diode Marking: XA
Source
PT2 Tch Tstg
The diode connected between the gate and source of the
transistor serves as a protector against ESD. When this device actually used, an additional...