2SK3109

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3109 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3109 is N channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC converter. ORDERING INFORMATION PART NUMBER 2SK3109 2SK3109-S 2SK3109-ZJ PACKAGE TO-220AB TO-262 TO-263 FEATURES Gate voltage rating ±30 V Low on-state resistance RDS(on) = 0.4 Ω MAX. (VGS = 10 V, ID = 5.0 A) Low input capacitance Ciss = 400 pF TYP. (VDS = 10 V, VGS = 0 V) Avalanche capability rated Built-in gate protection diode Surface mount device available ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Drain to source voltage (VGS = 0 V) Gate to source voltage (VDS = 0 V) Drain current (DC) (TC = 25 °C) Drain current (pulse) Note1 VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg 200 ±30 ±10 ±30 1.5 50 150 −55 to +150 10 35 V V A A W W °C °C A mJ Total power dissipation (TA = 25 °C) Total power dissipation (TC = 25 °C) Channel temperature Storage temperature Single avalanche current Single avalanche energy Note2 Note2 IAS EAS Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1 % 2. Starting Tch = 25 °C, VDD = 100 V, RG = 25 Ω, VGS = 20 V→0 V The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and...