Document
Ordering number:ENN6104A
N-Channel Silicon MOSFET
2SK3121
Ultrahigh-Speed Switching Applications
Features
· Low ON resistance. · Ultrahigh-speed switching. · 2.5V drive.
Package Dimensions
unit:mm 2062A
[2SK3121]
4.5 1.6 1.5
0.4 3 1.5 2 3.0 0.75
0.5 1
1.0
4.25max
2.5
0.4
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg
PW≤10µs, duty cycle≤1% Tc=25˚C Mounted on a ceramic board (250mm2×0.8mm)
1 : Gate 2 : Drain 3 : Source SANYO : PCP (Bottom view)
Conditions
Ratings 20 ±10 3 12 3.5 1.5 150 –55 to +150
Unit V V A A W W
˚C ˚C
Electrical Characteristics at Ta = 25˚C
Parameter Drain-to-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 ID=1mA, VGS=0 VDS=20V, VGS=0 VGS=±8V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=1.5A ID=1.5A, VGS=4V ID=500mA, VGS=2.5V Conditions Ratings min 20 10 ±10 0.4 3.0 4.3 115 160 150 220 1.3 typ max Unit V µA µA V S mΩ mΩ
Marking : KU
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
30100TS (KOTO) TA-2496 No.6104–1/4
2SK3121
Continued from preceding page.
Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Symbol Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD IS=3A, VGS=0 VDS=10V, VGS=10V, ID=3A VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz See specified Test Circuit See specified Test Circuit See specified Test Circuit See specified Test Circuit Conditions Ratings min typ 170 90 43 10 25 32 27 9.5 1 1.5 1.0 1.2 max Unit pF pF pF ns ns ns ns nC nC nC V
Switching Time Test Circuit
4V 0V VIN VDD=10V ID=1.5A RL=6.7Ω D VOUT
VIN PW=10µs D.C.≤1%
G
2SK3121 P.G 50Ω S
3.2
ID - VDS
V 10.0
6
ID - VGS
°C Tc=
0.8 1.2 1.6 2.0
VDS=10V
5
Drain Current, ID – A
Drain Current, ID – A
4
2.0 1.6 1.2 0.8 0.4 0 0
8.0V 6.0V 4.0V 3.0V
3
VGS=1.5V
2
1
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0 0
0.4
75° C
2.4 2.8
2.4
-25
2.8
2.
25°
5V
2.0V
C
3.2
Drain-to-Source Voltage, VDS – V
300
Gate-to-Source Voltage, VGS – V Tc=25°C Static Drain-to-Source On-State Resistance, RDS(on) – mΩ
280
R DS(on) - VGS
R DS(on) - Tc
Static Drain-to-Source On-State Resistance, RDS(on) – mΩ
250
240
ID=1.5A ID=0.5A
200
200
160
, 0.5A I D=
.5 I D=1
=2.5 VGS
V
150
=4V A,VGS
120
100
80
50
40 0 -60
0 0
1
2
3
4
5
6
7
8
9
10
-40
-20
0
20
40
60
80
100
120
140
160
Gate-to-Source Voltage, VGS – V
Case Temperature, Tc – °C
No.6104–2/4
2SK3121
10
| yfs | - ID
VDS=10V
Tc =-2 5°C
Forward Transfer Admittance, | yfs | – S
7 5 3 2
25°
C
Forward Current, IF – A
10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 7 5 3 2
I F - VSD
VGS=0
75°
C
1.0 7 5 3 2
75°C 25°C
0.2 0.4 0.6
0.1 0.01
2
3
5 7 0.1
2
3
5 7 1.0
2
3
5 7 10
0.001 0
T c=-2
0.8
5°C
1.0
1.2
1.4
Drain Current, ID – A
1000 7 5
Diode Forward Voltage, VSD – V f=1MHz
Gate-to-Source Voltage, VGS – V
10 9 8 7 6 5 4 3 2 1
Ciss,Coss,Crss - VDS
VGS - Qg
VDS=10V ID =3A
Ciss, Coss, Crss – pF
3 2
Ciss
100 7 5
Coss
Crss
3 2
10 0
2
4
6
8
10
12
14
16
18
20
0
0
1
2
3
4
5
6
7
8
9
10
Drain-to-Source Voltage,VDS – V
1000 7 5
Total Gate Charge, Qg – nC
SW Time - I D
VDD=10V VGS=4V
Drain Current, ID – A
A S O
2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2
IDP =12A ID=3A
DC
100µs
1m s 10 ms
Switching Time, SW Time – ns
3 2 100 7 5 3 2 10 7 5 3 2 1.0 7 0.1 2 3 5 7 1.0 2 3 5 7 10
10
op era
0m
s
td(off)
tf
tr
Operation in this area is limited by R DS (on).
tio
n
td(on)
0.01 0.1
Tc=25˚C 1pulse
2 3 5 7 1.0 2 3 5 7 10 2 3
Drain Current, ID – A
1.6
Drain-to-Source Voltage,VDS – V
4.0
P D - Ta
M
Allowable Power Dissipation, PD – W
P D - Tc
Allow.