DatasheetsPDF.com

2SK3121 Dataheets PDF



Part Number 2SK3121
Manufacturers Sanyo Semicon Device
Logo Sanyo Semicon Device
Description N-Channel MOSFET
Datasheet 2SK3121 Datasheet2SK3121 Datasheet (PDF)

Ordering number:ENN6104A N-Channel Silicon MOSFET 2SK3121 Ultrahigh-Speed Switching Applications Features · Low ON resistance. · Ultrahigh-speed switching. · 2.5V drive. Package Dimensions unit:mm 2062A [2SK3121] 4.5 1.6 1.5 0.4 3 1.5 2 3.0 0.75 0.5 1 1.0 4.25max 2.5 0.4 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature.

  2SK3121   2SK3121


Document
Ordering number:ENN6104A N-Channel Silicon MOSFET 2SK3121 Ultrahigh-Speed Switching Applications Features · Low ON resistance. · Ultrahigh-speed switching. · 2.5V drive. Package Dimensions unit:mm 2062A [2SK3121] 4.5 1.6 1.5 0.4 3 1.5 2 3.0 0.75 0.5 1 1.0 4.25max 2.5 0.4 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Tc=25˚C Mounted on a ceramic board (250mm2×0.8mm) 1 : Gate 2 : Drain 3 : Source SANYO : PCP (Bottom view) Conditions Ratings 20 ±10 3 12 3.5 1.5 150 –55 to +150 Unit V V A A W W ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Drain-to-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 ID=1mA, VGS=0 VDS=20V, VGS=0 VGS=±8V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=1.5A ID=1.5A, VGS=4V ID=500mA, VGS=2.5V Conditions Ratings min 20 10 ±10 0.4 3.0 4.3 115 160 150 220 1.3 typ max Unit V µA µA V S mΩ mΩ Marking : KU Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 30100TS (KOTO) TA-2496 No.6104–1/4 2SK3121 Continued from preceding page. Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Symbol Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD IS=3A, VGS=0 VDS=10V, VGS=10V, ID=3A VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz See specified Test Circuit See specified Test Circuit See specified Test Circuit See specified Test Circuit Conditions Ratings min typ 170 90 43 10 25 32 27 9.5 1 1.5 1.0 1.2 max Unit pF pF pF ns ns ns ns nC nC nC V Switching Time Test Circuit 4V 0V VIN VDD=10V ID=1.5A RL=6.7Ω D VOUT VIN PW=10µs D.C.≤1% G 2SK3121 P.G 50Ω S 3.2 ID - VDS V 10.0 6 ID - VGS °C Tc= 0.8 1.2 1.6 2.0 VDS=10V 5 Drain Current, ID – A Drain Current, ID – A 4 2.0 1.6 1.2 0.8 0.4 0 0 8.0V 6.0V 4.0V 3.0V 3 VGS=1.5V 2 1 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 0 0.4 75° C 2.4 2.8 2.4 -25 2.8 2. 25° 5V 2.0V C 3.2 Drain-to-Source Voltage, VDS – V 300 Gate-to-Source Voltage, VGS – V Tc=25°C Static Drain-to-Source On-State Resistance, RDS(on) – mΩ 280 R DS(on) - VGS R DS(on) - Tc Static Drain-to-Source On-State Resistance, RDS(on) – mΩ 250 240 ID=1.5A ID=0.5A 200 200 160 , 0.5A I D= .5 I D=1 =2.5 VGS V 150 =4V A,VGS 120 100 80 50 40 0 -60 0 0 1 2 3 4 5 6 7 8 9 10 -40 -20 0 20 40 60 80 100 120 140 160 Gate-to-Source Voltage, VGS – V Case Temperature, Tc – °C No.6104–2/4 2SK3121 10 | yfs | - ID VDS=10V Tc =-2 5°C Forward Transfer Admittance, | yfs | – S 7 5 3 2 25° C Forward Current, IF – A 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 7 5 3 2 I F - VSD VGS=0 75° C 1.0 7 5 3 2 75°C 25°C 0.2 0.4 0.6 0.1 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 0.001 0 T c=-2 0.8 5°C 1.0 1.2 1.4 Drain Current, ID – A 1000 7 5 Diode Forward Voltage, VSD – V f=1MHz Gate-to-Source Voltage, VGS – V 10 9 8 7 6 5 4 3 2 1 Ciss,Coss,Crss - VDS VGS - Qg VDS=10V ID =3A Ciss, Coss, Crss – pF 3 2 Ciss 100 7 5 Coss Crss 3 2 10 0 2 4 6 8 10 12 14 16 18 20 0 0 1 2 3 4 5 6 7 8 9 10 Drain-to-Source Voltage,VDS – V 1000 7 5 Total Gate Charge, Qg – nC SW Time - I D VDD=10V VGS=4V Drain Current, ID – A A S O 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 IDP =12A ID=3A DC 100µs 1m s 10 ms Switching Time, SW Time – ns 3 2 100 7 5 3 2 10 7 5 3 2 1.0 7 0.1 2 3 5 7 1.0 2 3 5 7 10 10 op era 0m s td(off) tf tr Operation in this area is limited by R DS (on). tio n td(on) 0.01 0.1 Tc=25˚C 1pulse 2 3 5 7 1.0 2 3 5 7 10 2 3 Drain Current, ID – A 1.6 Drain-to-Source Voltage,VDS – V 4.0 P D - Ta M Allowable Power Dissipation, PD – W P D - Tc Allow.


2SK3120 2SK3121 2SK3122


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)