N-Channel MOSFET. 2SK3131 Datasheet


2SK3131 MOSFET. Datasheet pdf. Equivalent


2SK3131


N-Channel MOSFET
2SK3131
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)

2SK3131
Chopper Regulator DC−DC Converter and Motor Drive Applications
Fast reverse recovery time Low drain−source ON resistance High forward transfer admittance Low leakage current Enhancement mode : trr = 105 ns (typ.) : RDS (ON) = 0.085 Ω (typ.) : |Yfs| = 35 S (typ.) Unit: mm

Built-in high-speed free-wheeling diode

: IDSS = 100 µA (max) (VDS = 500 V) : Vth = 2.4~3.4 V (VDS = 10 V, ID = 1 mA)

Maximum Ratings (Ta = 25°C)
Characteristics Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage DC Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 500 500 ±30 50 200 250 525 50 25 150 −55~150 Unit V V V A A W mJ A mJ °C °C

Pulse (Note 1)

Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range

JEDEC JEITA TOSHIBA

— — 2-21F1B

Weight: 9.75 g (typ.)

Thermal Characteristics
Characteristics Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch−c) Rth (ch−a) Max 0.5 35.7 Unit °C / W °C / W

Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: VDD = 90 V, Tch = 25°C (initial), L = 357 µH, RG = 25 Ω, IAR = 50 A Note 3: Repetitive rating: pulse width limited by maximum channel te...



2SK3131
2SK3131
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
2SK3131
Chopper Regulator DCDC Converter and Motor Drive
Applications
Unit: mm
Fast reverse recovery time
: trr = 105 ns (typ.)
Built-in high-speed free-wheeling diode
Low drainsource ON resistance : RDS (ON) = 0.085 (typ.)
High forward transfer admittance : |Yfs| = 35 S (typ.)
Low leakage current : IDSS = 100 µA (max) (VDS = 500 V)
Enhancement mode : Vth = 2.4~3.4 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Drainsource voltage
Draingate voltage (RGS = 20 k)
Gatesource voltage
DC Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Symbol
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
Rating
500
500
±30
50
200
250
525
50
25
150
55~150
Unit
V
V
V
A
A
W
mJ
A
mJ
°C
°C
JEDEC
JEITA
TOSHIBA
2-21F1B
Weight: 9.75 g (typ.)
Thermal Characteristics
Characteristics
Symbol
Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to
ambient
Rth (chc)
Rth (cha)
0.5
35.7
°C / W
°C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 357 µH, RG = 25 , IAR = 50 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature.
This transistor is an electrostatic-sensitive device.
Please handle with caution.
1 2004-07-06

2SK3131
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Gate leakage current
Gatesource breakdown voltage
Drain cutoff current
Drainsource breakdown voltage
Gate threshold voltage
Drainsource ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
IGSS
V (BR) GSS
IDSS
V (BR) DSS
Vth
RDS (ON)
|Yfs|
Ciss
Crss
Coss
VGS = ±25 V, VDS = 0 V
IG = ±100 µA, VDS = 0 V
VDS = 500 V, VGS = 0 V
ID = 10 mA, VGS = 0 V
VDS = 10 V, ID = 1 mA
VGS = 10 V, ID = 25 A
VDS = 10 V, ID = 25 A
VDS = 10 V, VGS = 0 V, f = 1 MHz
Rise time
tr
Switching time
Turnon time
Fall time
ton
tf
Turnoff time
Total gate charge (Gatesource
plus gatedrain)
Gatesource charge
Gatedrain (“miller”) charge
toff
Qg
Qgs VDD 400 V, VGS = 10 V, ID = 50 A
Qgd
SourceDrain Ratings and Characteristics (Ta = 25°C)
Characteristics
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
IDR
IDRP
VDSF
trr
Qrr
Test Condition
VDR = 25 A, VGS = 0 V
IDR = 50 A, VGS = 0 V
dIDR / dt = 100 A / µs
Marking
2SK3131
Min Typ. Max
— — ±10
±30 —
— — 100
500 —
2.4 — 3.4
— 0.085 0.11
15 35 —
— 11000 —
— 2100 —
— 4200 —
Unit
µA
V
µA
V
V
S
pF
— 105 —
— 160 —
— 65 —
ns
— 245 —
— 280 —
— 150 —
— 130 —
nC
Min Typ. Max Unit
— — 50 A
— — 200 A
— — 1.7 V
— 105 — ns
— 380 — nC
TOSHIBA
2SK3131
JAPAN
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2 2004-07-06




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