2SK3133

2SK3133(L),2SK3133(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-720 (Z) Target Specification 1st. Edition February 1999 Features Low on-resistance R DS(on) = 7 mΩ typ. Low drive current 4 V gate drive device can be driven from 5 V source Outline LDPAK 4 4 D 1 1 2 3 G 2 3 1. Gate 2. Drain 3. Source 4. Drain S 2SK3133(L),2SK3133(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C Symbol VDSS VGSS ID I D(pulse) I DR Pch Tch Tstg Note 2 Note 1 Ratings 30 ±20 50 200 50 50 150 –55 to +150 Unit V V A A A W °C °C Electrical Characteristics (Ta = 25°C) Item Symbol Min 30 — — 1.0 — — |yfs| Ciss Coss Crss Qg Qgs Qgd t d(on) tr t d(off) tf VDF t rr TBD — — — — — — — — — — — — Typ — — — — 7 12 TBD TBD TBD TBD TBD TBD TBD TBD TBD TBD TBD TBD TBD Max — ±0.1 10 2.5 10 18 — — — — — — — — — — — — — Unit V µA µA V mΩ mΩ S pF pF pF nc nc nc ns ns ns ns V ns I F = 50 A, VGS = 0 I F = 50 A, VGS = 0 diF/ dt = 50 A/ µs Test Conditions I D = 10 mA, VGS = 0 VGS = ±20 V, VDS = 0 VDS = 30 V, VGS = 0 I D = 1 mA, VDS = 10 V Note 1 I D = 25 A, VGS = 10 V Note 1 I D = 25 A, VGS = 4 V Note 1 I D = 25 A, VDS = 10 V Note 1 VDS = 10V VGS = 0 f = 1 MHz VDD = 10 V VGS = 10 V I D = 50 A VGS = 10 V, ID = 25 A RL = 0.4 Ω Drain to source breakdown volt...