MOS FET. 2SK3133 Datasheet


2SK3133 FET. Datasheet pdf. Equivalent


2SK3133


Silicon N Channel MOS FET
2SK3133(L),2SK3133(S)
Silicon N Channel MOS FET High Speed Power Switching

ADE-208-720 (Z) Target Specification 1st. Edition February 1999 Features
• Low on-resistance R DS(on) = 7 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source

Outline
LDPAK
4 4

D 1 1

2

3

G

2

3

1. Gate 2. Drain 3. Source 4. Drain

S

2SK3133(L),2SK3133(S)
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C Symbol VDSS VGSS ID I D(pulse) I DR Pch Tch Tstg
Note 2 Note 1

Ratings 30 ±20 50 200 50 50 150 –55 to +150

Unit V V A A A W °C °C

Electrical Characteristics (Ta = 25°C)
Item Symbol Min 30 — — 1.0 — — |yfs| Ciss Coss Crss Qg Qgs Qgd t d(on) tr t d(off) tf VDF t rr TBD — — — — — — — — — — — — Typ — — — — 7 12 TBD TBD TBD TBD TBD TBD TBD TBD TBD TBD TBD TBD TBD Max — ±0.1 10 2.5 10 18 — — — — — — — — — — — — — Unit V µA µA V mΩ mΩ S pF pF pF nc nc nc ns ns ns ns V ns I F = 50 A, VGS = 0 I F = 50 A, VGS = 0 diF/ dt = 50 A/ µs Test Conditions I D = 10 mA, VGS = 0 VGS = ±20 V, VDS = 0 VDS = 30 V, VGS = 0 I D = 1 mA, VDS = 10 V Note 1 I D = 25 A, VGS = 10 V Note 1 I D = 25 A, VGS = 4 V Note 1 I D = 25 A, VDS = 10 V Note 1 VDS = 10V VGS = 0 f = 1 ...



2SK3133
2SK3133(L),2SK3133(S)
Silicon N Channel MOS FET
High Speed Power Switching
Features
Low on-resistance
RDS(on) = 7 mtyp.
Low drive current
4 V gate drive device can be driven from 5 V source
Outline
ADE-208-720 (Z)
Target Specification
1st. Edition
February 1999
LDPAK
D
G
S
44
1
2
3
1
2
3
1. Gate
2. Drain
3. Source
4. Drain

2SK3133
2SK3133(L),2SK3133(S)
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Channel dissipation
VDSS
VGSS
ID
I Note 1
D(pulse)
I DR
Pch Note 2
Channel temperature
Tch
Storage temperature
Tstg
Note: 1. PW 10 µs, duty cycle 1%
2. Value at Tc = 25°C
Ratings
30
±20
50
200
50
50
150
–55 to +150
Unit
V
V
A
A
A
W
°C
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source breakdown voltage V(BR)DSS
Gate to source leak current
I GSS
Zero gate voltege drain current
I DSS
Gate to source cutoff voltage
VGS(off)
Static drain to source on state
RDS(on)
resistance
30
1.0
Forward transfer admittance
Input capacitance
|yfs|
Ciss
TBD
Output capacitance
Coss —
Reverse transfer capacitance
Crss —
Total gate charge
Qg —
Gate to source charge
Qgs —
Gate to drain charge
Qgd —
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse
recovery time
t d(on)
tr
t d(off)
tf
VDF
t rr
Note: 1. Pulse test
Typ
7
12
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
Max
±0.1
10
2.5
10
18
Unit
V
µA
µA
V
m
m
S
pF
pF
pF
nc
nc
nc
ns
ns
ns
ns
V
ns
Test Conditions
ID = 10 mA, VGS = 0
VGS = ±20 V, VDS = 0
VDS = 30 V, VGS = 0
ID = 1 mA, VDS = 10 V Note 1
ID = 25 A, VGS = 10 V Note 1
ID = 25 A, VGS = 4 V Note 1
ID = 25 A, VDS = 10 V Note 1
VDS = 10V
VGS = 0
f = 1 MHz
VDD = 10 V
VGS = 10 V
ID = 50 A
VGS = 10 V, ID = 25 A
RL = 0.4
IF = 50 A, VGS = 0
IF = 50 A, VGS = 0
diF/ dt = 50 A/ µs
2




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