MOS FET. 2SK3135 Datasheet


2SK3135 FET. Datasheet pdf. Equivalent


2SK3135


Silicon N Channel MOS FET
2SK3135(L),2SK3135(S)
Silicon N Channel MOS FET High Speed Power Switching

ADE-208-695B (Z) 3rd. Edition February 1999 Features
• Low on-resistance R DS(on) = 6 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source

Outline
LDPAK
4 4

2 1 1 2 3

1

2

3

1. Gate 2. Drain 3. Source 4. Drain

3

2SK3135(L),2SK3135(S)
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR I AP EAR Pch Tch Tstg
Note 3 Note 3 Note 2 Note 1

Ratings 60 ±20 75 300 75 50 214 100 150 –55 to +150

Unit V V A A A A mJ W °C °C

1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω

2

2SK3135(L),2SK3135(S)
Electrical Characteristics (Ta = 25°C)
Item Symbol Min 60 — — 1.0 — — |yfs| Ciss Coss Crss Qg Qgs Qgd t d(on) tr t d(off) tf VDF t rr 50 — — — — — — — — — — — — Typ — — — — 6.0 8.0 80 7100 1000 300 125 25 25 60 300 520 330 1.05 90 Max — ±0.1 10 2.5 7.5 12 — — — — — — — — — — — — — Unit V µA µA V mΩ mΩ S pF pF pF nc nc nc ns ns ns ns V ns I F = 75 A, VGS = 0 I F = 75 A, VGS = 0 diF/ dt = 50 A/ µs Test Conditions I D = 10 mA, VGS = 0 VGS = ±20 V, VDS = 0 VDS = 60 V, VGS = 0 I D = 1 mA, VDS = 10 V Note 1 I D...



2SK3135
2SK3135(L),2SK3135(S)
Silicon N Channel MOS FET
High Speed Power Switching
Features
Low on-resistance
RDS(on) = 6 mtyp.
Low drive current
4 V gate drive device can be driven from 5 V source
Outline
ADE-208-695B (Z)
3rd. Edition
February 1999
LDPAK
2
1
3
44
1
2
3
1
2
3
1. Gate
2. Drain
3. Source
4. Drain

2SK3135
2SK3135(L),2SK3135(S)
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
VDSS
VGSS
ID
I Note 1
D(pulse)
I DR
I Note 3
AP
E Note 3
AR
Pch Note 2
Channel temperature
Tch
Storage temperature
Tstg
Note:
1. PW 10 µs, duty cycle 1%
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg 50
Ratings
60
±20
75
300
75
50
214
100
150
–55 to +150
Unit
V
V
A
A
A
A
mJ
W
°C
°C
2




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