2SK3141

2SK3141 Silicon N Channel MOS FET High Speed Power Switching ADE-208-680B (Z) 3rd. Edition February 1999 Features Low on-resistance R DS(on) = 4 mΩ typ. Low drive current 4 V gate drive device can be driven from 5 V source Outline TO–220AB D G 1 2 S 3 1. Gate 2. Drain(Flange) 3. Source 2SK3141 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR I AP Note 3 Note 3 Note 2 Note 1 Ratings 30 ±20 75 300 75 35 122 100 150 –55 to +150 Unit V V A A A A mJ W °C °C EAR Pch Tch Tstg 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω 2 2SK3141 Electrical Characteristics (Ta = 25°C) Item Symbol Min 30 — — 1.0 — — |yfs| Ciss Coss Crss Qg Qgs Qgd t d(on) tr t d(off) tf VDF t rr 50 — — — — — — — — — — — — Typ — — — — 4.0 5.5 80 6800 1550 500 130 16 30 50 370 550 380 1.05 80 Max — ±0.1 10 2.5 5.0 8.5 — — — — — — — — — — — — — Unit V µA µA V mΩ mΩ S pF pF pF nc nc nc ns ns ns ns V ns I F = 75 A, VGS = 0 I F = 75 A, VGS = 0 diF/ dt = 50 A/ µs Test Conditions I D = 10 mA, VGS = 0 VGS = ±20 V, VDS = 0 VDS = 30 V, VGS = 0 I D = 1 mA, VDS = 10 V Note 1 I D = 40 A, VGS = 10 V Note 1 I D = 40 A, VGS = 4 V Note 1 I D = 40 A, VDS = 10 V Note 1 VDS = 10 V VGS = 0 f = 1 MHz VDD = 10 V VGS = 10 V I D = 75 A V...