Document
2SK3150(L), 2SK3150(S)
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-750A (Z) 2nd. Edition February 1999 Features
• Low on-resistance R DS = 45 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source
Outline
LDPAK
4 4
D
1 1
2
3
G
2
3
1. Gate 2. Drain 3. Source 4. Drain
S
2SK3150(L),2SK3150(S)
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR I AP
Note3 Note3 Note2 Note1
Ratings 100 ±20 20 60 20 20 40 50 150 –55 to +150
Unit V V A A A A mJ W °C °C
EAR
Pch Tch
Tstg
1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω
Electrical Characteristics (Ta = 25°C)
Item Symbol Min 100 ±20 — — 1.0 — — 8.5 — — — — — — — — — Typ — — — — — 45 65 15 900 400 210 15 120 200 150 0.9 90 Max — — ±10 10 2.5 60 85 — — — — — — — — — — Unit V V µA µA V mΩ mΩ S pF pF pF ns ns ns ns V ns I F = 20 A, VGS = 0 I F = 20 A, VGS = 0 diF/ dt = 50A/ µs Test Conditions I D = 10 mA, VGS = 0 I G = ±100 µA, VDS = 0 VGS = ±16 V, VDS = 0 VDS = 100 V, VGS = 0 I D = 1 mA, VDS = 10 V I D = 10 A, VGS = 10 VNote4 I D = 10 A, VGS = 4 V Note4 I D = 10 A, VDS = 10 V Note4 VDS = 10 V VGS = 0 f = 1 MHz I D = 10 A, VGS = 10 V RL = 3 Ω Drain to source breakdown voltage V(BR)DSS Gate to source breakdown voltage V(BR)GSS Gate to source leak current Zero gate voltege drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body–drain diode forward voltage Body–drain diode reverse recovery time Note: 4. Pulse test I GSS I DSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr
2
2SK3150(L),2SK3150(S)
Main Characteristics
Power vs. Temperature Derating 80 500
Maximum Safe Operation Area
Pch (W)
I D (A)
100 30 10 3 1 0.3
DC
60
Channel Dissipation
Drain Current
40
PW
Op er
10 µs 0µ 1 s m s
10
=1
on
ati
0m
(T
20
0
50
100
150 Tc (°C)
200
0.1 Ta = 25 °C 0.05 0.5 1 2 5 10 20
ho t) Operation in °C ) this area is limited by R DS(on)
c= 25
s(
1s
50 100 200 500 V DS (V)
Case Temperature
Drain to Source Voltage
Typical Output Characteristics 20 4V 3.5 V Pulse Test 20
Typical Transfer Characteristics V DS = 10 V Pulse Test
I D (A)
12 3V 8
ID Drain Current
(A)
16
10 V 6V
16
12
Drain Current
8 Tc = 75°C 4 –25°C 25°C
4
VGS =2.5 V
0
2 4 6 Drain to Source Voltage
8 10 V DS (V)
0
1 2 3 Gate to Source Voltage
4 5 V GS (V)
3
2SK3150(L),2SK3150(S)
Drain to Source Saturation Voltage vs. Gate to Source Voltage 2.5 Static Drain to Source on State Resistance vs. Drain Current 500 Pulse Test 200 100 50
Drain to Source Saturation Voltage V DS(on) (V)
Pulse Test
2.0
1.5
Drain to Source On State Resistance R DS(on) ( mΩ )
VGS = 4 V 10 V
1.0 I D = 15 A 0.5 10 A 5A 0 12 4 8 Gate to Source Voltage 16 20 V GS (V)
20 10 1 2 5 10 Drain Current 20 50 I D (A) 100
Static Drain to Source on State Resistance R DS(on) ( mΩ)
Forward Transfer Admittance |y fs | (S)
Static Drain to Source on State Resistance vs. Temperature 250 Pulse Test 200
Forward Transfer Admittance vs. Drain Current 50 20 Tc = –25 °C 10 75 °C 5 2 1 0.5 0.1 V DS = 10 V Pulse Test 0.3 1 3 10 30 Drain Current I D (A) 100 25 °C
150 15 A 100 V GS = 4 V 50 10 V 0 –40
5,10 A
15 A 5,10 A
0 40 80 120 160 Case Temperature Tc (°C)
4
2SK3150(L),2SK3150(S)
Body–Drain Diode Reverse Recovery Time 500 10000 di / dt = 50 A / µs V GS = 0, Ta = 25°C 5000 Typical Capacitance vs. Drain to Source Voltage
Reverse Recovery Time trr (ns)
200 100 50 20 10 5 2 1 0.1
Capacitance C (pF)
2000 1000 500 200 100 50 20 10 VGS = 0 f = 1 MHz 0 10 20 30 40 50 Crss Coss Ciss
1 3 0.3 Reverse Drain Current
10 30 50 I DR (A)
Drain to Source Voltage V DS (V)
Dynamic Input Characteristics
V DS (V)
I D = 15 A V DD = 100 V 50 V 25 V V DS V GS
V GS (V)
200
20
1000 500
Switching Characteristics V GS = 10 V, V DD = 30 V PW = 5 µs, duty < 1% t d(off)
Switching Time t (ns)
160
16
Drain to Source Voltage
120
12
Gate to Source Voltage
200 tf 100 50 tr 20 10 0.1 0.2 t d(on) 2 0.5 1 50 10 Drain Current I D (A) 20
80
8
40
V DD = 100 V 50 V 25 V 20 40 60 80 Gate Charge Qg (nc)
4 0 100
0
5
2SK3150(L),2SK3150(S)
Reverse Drain Current vs. Source to Drain Voltage Pulse Test
Repetive Avalanche Energy E AR (mJ)
Maximun Avalanche Energy vs. Channel Temperature Derating 50 I AP = 20 A V DD = 50 V duty < 0.1 % Rg > 50 Ω
20
Reverse Drain Current I DR (A)
16
40
12
10 V 5V
30
8
20
4
V GS = 0, –5 V 0.2 0.4 0.6 0.8 1.0
10 0 25
0
50
75
100
125
150
Source to Drain Voltage
V SD (V)
Channel Temperature Tch (°C)
Avalanche Test Circuit
Avalanche Wa.