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2SK3150 Dataheets PDF



Part Number 2SK3150
Manufacturers Hitachi Semiconductor
Logo Hitachi Semiconductor
Description N-Channel MOSFET
Datasheet 2SK3150 Datasheet2SK3150 Datasheet (PDF)

2SK3150(L), 2SK3150(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-750A (Z) 2nd. Edition February 1999 Features • Low on-resistance R DS = 45 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline LDPAK 4 4 D 1 1 2 3 G 2 3 1. Gate 2. Drain 3. Source 4. Drain S 2SK3150(L),2SK3150(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse dra.

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2SK3150(L), 2SK3150(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-750A (Z) 2nd. Edition February 1999 Features • Low on-resistance R DS = 45 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline LDPAK 4 4 D 1 1 2 3 G 2 3 1. Gate 2. Drain 3. Source 4. Drain S 2SK3150(L),2SK3150(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR I AP Note3 Note3 Note2 Note1 Ratings 100 ±20 20 60 20 20 40 50 150 –55 to +150 Unit V V A A A A mJ W °C °C EAR Pch Tch Tstg 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω Electrical Characteristics (Ta = 25°C) Item Symbol Min 100 ±20 — — 1.0 — — 8.5 — — — — — — — — — Typ — — — — — 45 65 15 900 400 210 15 120 200 150 0.9 90 Max — — ±10 10 2.5 60 85 — — — — — — — — — — Unit V V µA µA V mΩ mΩ S pF pF pF ns ns ns ns V ns I F = 20 A, VGS = 0 I F = 20 A, VGS = 0 diF/ dt = 50A/ µs Test Conditions I D = 10 mA, VGS = 0 I G = ±100 µA, VDS = 0 VGS = ±16 V, VDS = 0 VDS = 100 V, VGS = 0 I D = 1 mA, VDS = 10 V I D = 10 A, VGS = 10 VNote4 I D = 10 A, VGS = 4 V Note4 I D = 10 A, VDS = 10 V Note4 VDS = 10 V VGS = 0 f = 1 MHz I D = 10 A, VGS = 10 V RL = 3 Ω Drain to source breakdown voltage V(BR)DSS Gate to source breakdown voltage V(BR)GSS Gate to source leak current Zero gate voltege drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body–drain diode forward voltage Body–drain diode reverse recovery time Note: 4. Pulse test I GSS I DSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 2 2SK3150(L),2SK3150(S) Main Characteristics Power vs. Temperature Derating 80 500 Maximum Safe Operation Area Pch (W) I D (A) 100 30 10 3 1 0.3 DC 60 Channel Dissipation Drain Current 40 PW Op er 10 µs 0µ 1 s m s 10 =1 on ati 0m (T 20 0 50 100 150 Tc (°C) 200 0.1 Ta = 25 °C 0.05 0.5 1 2 5 10 20 ho t) Operation in °C ) this area is limited by R DS(on) c= 25 s( 1s 50 100 200 500 V DS (V) Case Temperature Drain to Source Voltage Typical Output Characteristics 20 4V 3.5 V Pulse Test 20 Typical Transfer Characteristics V DS = 10 V Pulse Test I D (A) 12 3V 8 ID Drain Current (A) 16 10 V 6V 16 12 Drain Current 8 Tc = 75°C 4 –25°C 25°C 4 VGS =2.5 V 0 2 4 6 Drain to Source Voltage 8 10 V DS (V) 0 1 2 3 Gate to Source Voltage 4 5 V GS (V) 3 2SK3150(L),2SK3150(S) Drain to Source Saturation Voltage vs. Gate to Source Voltage 2.5 Static Drain to Source on State Resistance vs. Drain Current 500 Pulse Test 200 100 50 Drain to Source Saturation Voltage V DS(on) (V) Pulse Test 2.0 1.5 Drain to Source On State Resistance R DS(on) ( mΩ ) VGS = 4 V 10 V 1.0 I D = 15 A 0.5 10 A 5A 0 12 4 8 Gate to Source Voltage 16 20 V GS (V) 20 10 1 2 5 10 Drain Current 20 50 I D (A) 100 Static Drain to Source on State Resistance R DS(on) ( mΩ) Forward Transfer Admittance |y fs | (S) Static Drain to Source on State Resistance vs. Temperature 250 Pulse Test 200 Forward Transfer Admittance vs. Drain Current 50 20 Tc = –25 °C 10 75 °C 5 2 1 0.5 0.1 V DS = 10 V Pulse Test 0.3 1 3 10 30 Drain Current I D (A) 100 25 °C 150 15 A 100 V GS = 4 V 50 10 V 0 –40 5,10 A 15 A 5,10 A 0 40 80 120 160 Case Temperature Tc (°C) 4 2SK3150(L),2SK3150(S) Body–Drain Diode Reverse Recovery Time 500 10000 di / dt = 50 A / µs V GS = 0, Ta = 25°C 5000 Typical Capacitance vs. Drain to Source Voltage Reverse Recovery Time trr (ns) 200 100 50 20 10 5 2 1 0.1 Capacitance C (pF) 2000 1000 500 200 100 50 20 10 VGS = 0 f = 1 MHz 0 10 20 30 40 50 Crss Coss Ciss 1 3 0.3 Reverse Drain Current 10 30 50 I DR (A) Drain to Source Voltage V DS (V) Dynamic Input Characteristics V DS (V) I D = 15 A V DD = 100 V 50 V 25 V V DS V GS V GS (V) 200 20 1000 500 Switching Characteristics V GS = 10 V, V DD = 30 V PW = 5 µs, duty < 1% t d(off) Switching Time t (ns) 160 16 Drain to Source Voltage 120 12 Gate to Source Voltage 200 tf 100 50 tr 20 10 0.1 0.2 t d(on) 2 0.5 1 50 10 Drain Current I D (A) 20 80 8 40 V DD = 100 V 50 V 25 V 20 40 60 80 Gate Charge Qg (nc) 4 0 100 0 5 2SK3150(L),2SK3150(S) Reverse Drain Current vs. Source to Drain Voltage Pulse Test Repetive Avalanche Energy E AR (mJ) Maximun Avalanche Energy vs. Channel Temperature Derating 50 I AP = 20 A V DD = 50 V duty < 0.1 % Rg > 50 Ω 20 Reverse Drain Current I DR (A) 16 40 12 10 V 5V 30 8 20 4 V GS = 0, –5 V 0.2 0.4 0.6 0.8 1.0 10 0 25 0 50 75 100 125 150 Source to Drain Voltage V SD (V) Channel Temperature Tch (°C) Avalanche Test Circuit Avalanche Wa.


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