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2SK3161S Dataheets PDF



Part Number 2SK3161S
Manufacturers Hitachi Semiconductor
Logo Hitachi Semiconductor
Description Silicon N-Channel MOSFET
Datasheet 2SK3161S Datasheet2SK3161S Datasheet (PDF)

2SK3161(L), 2SK3161(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-734A (Z) 2nd. Edition February 1999 Features • Low on-resistance R DS = 90 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline LDPAK 4 4 D 1 1 2 3 G 2 3 1. Gate 2. Drain 3. Source 4. Drain S 2SK3161(L),2SK3161(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse dra.

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2SK3161(L), 2SK3161(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-734A (Z) 2nd. Edition February 1999 Features • Low on-resistance R DS = 90 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline LDPAK 4 4 D 1 1 2 3 G 2 3 1. Gate 2. Drain 3. Source 4. Drain S 2SK3161(L),2SK3161(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR I AP Note3 Note3 Note2 Note1 Ratings 200 ±20 15 60 15 15 15 75 150 –55 to +150 Unit V V A A A A mJ W °C °C EAR Pch Tch Tstg 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω Electrical Characteristics (Ta = 25°C) Item Symbol Min 200 ±20 — — 1.0 — — 16 — — — — — — — — — Typ — — — — — 90 95 20 1600 510 250 20 120 400 170 0.85 100 Max — — ±10 10 2.5 115 125 — — — — — — — — — — Unit V V µA µA V mΩ mΩ S pF pF pF ns ns ns ns V ns I F = 15 A, VGS = 0 I F = 15 A, VGS = 0 diF/ dt = 50 A/ µs Test Conditions I D = 10 mA, VGS = 0 I G = ±100 µA, VDS = 0 VGS = ±16 V, VDS = 0 VDS = 200 V, VGS = 0 I D = 1 mA, VDS = 10 V I D = 8 A, VGS = 10 VNote4 I D = 8 A, VGS = 4 V Note4 I D = 8 A, VDS = 10 V Note4 VDS = 10 V VGS = 0 f = 1 MHz I D = 8 A, VGS = 10 V RL = 3.75 Ω Drain to source breakdown voltage V(BR)DSS Gate to source breakdown voltage V(BR)GSS Gate to source leak current Zero gate voltege drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body–drain diode forward voltage Body–drain diode reverse recovery time Note: 4. Pulse test I GSS I DSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 2 2SK3161(L),2SK3161(S) Main Characteristics Power vs. Temperature Derating 80 100 Maximum Safe Operation Area Pch (W) I D (A) 30 10 3 1 DC 60 µs 0 1 m µs s 10 PW Op era 10 Channel Dissipation Drain Current =1 40 tio 0m Tc n( s( 1s 20 0.3 Operation in this area is 0.1 limited by R DS(on) 0.03 0.01 Ta = 25 °C 1 2 5 =2 ho ) t) 5°C 0 50 100 150 Tc (°C) 200 10 20 50 100 200 500 V DS (V) Case Temperature Drain to Source Voltage Typical Output Characteristics 50 Pulse Test 10 V 6V 4V 3.5 V 30 20 Typical Transfer Characteristics V DS = 10 V Pulse Test I D (A) ID Drain Current (A) 3V 40 16 12 Drain Current 20 8 Tc = 75°C –25°C 25°C 10 VGS =2.5 V 0 2 4 6 Drain to Source Voltage 8 10 V DS (V) 4 0 1 2 3 Gate to Source Voltage 4 5 V GS (V) 3 2SK3161(L),2SK3161(S) Drain to Source Saturation Voltage vs. Gate to Source Voltage Static Drain to Source on State Resistance vs. Drain Current 500 Pulse Test Drain to Source Saturation Voltage V DS(on) (V) Pulse Test 4 Drain to Source On State Resistance R DS(on) (mΩ ) 5 200 VGS = 4 V 100 10 V 50 3 2 I D = 15 A 1 10 A 5A 0 12 4 8 Gate to Source Voltage 16 20 V GS (V) 20 10 1 2 50 10 20 5 Drain Current I D (A) 100 Static Drain to Source on State Resistance R DS(on) ( mΩ) Forward Transfer Admittance |y fs | (S) Static Drain to Source on State Resistance vs. Temperature 500 Pulse Test 400 5, 10 A 15 A 200 V GS = 4 V 5, 10 A 100 10 V 0 –40 0 40 80 120 160 Case Temperature Tc (°C) 15 A Forward Transfer Admittance vs. Drain Current 50 25 °C 20 Tc = –25 °C 10 5 2 1 0.5 0.1 V DS = 10 V Pulse Test 0.3 1 3 10 30 Drain Current I D (A) 100 75 °C 300 4 2SK3161(L),2SK3161(S) Body–Drain Diode Reverse Recovery Time 1000 10000 di / dt = 50 A / µs V GS = 0, Ta = 25°C 5000 Typical Capacitance vs. Drain to Source Voltage Reverse Recovery Time trr (ns) Capacitance C (pF) 500 2000 1000 500 200 100 50 Ciss 200 100 50 Coss Crss VGS = 0 f = 1 MHz 0 10 20 30 40 50 20 10 0.1 20 10 0.3 1 3 10 30 100 Reverse Drain Current I DR (A) Drain to Source Voltage V DS (V) Dynamic Input Characteristics Switching Characteristics V DS (V) V GS (V) 200 V GS V DS V DD = 150 V 100 V 50 V 20 500 300 t d(off) tf Switching Time t (ns) 160 16 100 30 10 Drain to Source Voltage 120 12 Gate to Source Voltage tr t d(on) 80 I D = 15 A V DD = 150 V 100 V 50 V 40 80 120 160 Gate Charge Qg (nc) 8 40 4 0 200 3 1 0.1 V GS = 10 V, V DD = 30 V PW = 5 µs, duty < 1% 0.3 3 1 Drain Current 10 I D (A) 30 100 0 5 2SK3161(L),2SK3161(S) Reverse Drain Current vs. Source to Drain Voltage Repetive Avalanche Energy E AR (mJ) Maximun Avalanche Energy vs. Channel Temperature Derating 20 I AP = 15 A V DD = 50 V duty < 0.1 % Rg > 50 Ω 20 Reverse Drain Current I DR (A) 16 10 V 12 16 12 8 V GS = 0, –5 V 5V Pulse Test 8 4 4 0 25 0 0.4 0.8 1.2 1.6 2.0 50 75 100 125 150 Source to Drain Voltage V SD (V) Channel Temperature Tch (°C) Avalanche Test Circuit Avalanche Wav.


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