2SK3162
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-735B (Z) 3rd. Edition February 1999 Features
Low on-resistance R DS = 60 mΩ typ. High speed switching 4 V gate drive device can be driven from 5 V source
Outline
TO–220FM
D
G
1 2 S
1. Gate 2. Drain 3. Source
3
2SK3162
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source vo...
