2SK3176
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOS V)
2SK3176
Switching Regulator, DC-DC Convert...
2SK3176
TOSHIBA Field Effect
Transistor Silicon N Channel MOS Type (π-MOS V)
2SK3176
Switching
Regulator, DC-DC Converter and Motor Drive Applications
Unit: mm
Low drain-source ON resistance: RDS (ON) = 38 mΩ (typ.) High forward transfer admittance: |Yfs| = 30 S (typ.) Low leakage current: IDSS = 100 μA (max) (VDS = 200 V) Enhancement-mode: Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage
Drain current
DC (Note 1) Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy (Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
VDSS VDGR VGSS
ID IDP PD
EAS
IAR EAR Tch Tstg
200 200 ±20 30 120 150
925
30 15 150 −55 to 150
V V V
A
W mJ A mJ °C °C
1. GATE 2. DRAIN (HEAT SINK) 3. SOURCE
JEDEC
⎯
JEITA
SC-65
TOSHIBA
2-16C1B
Weight: 4.6 g (typ.)
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: VDD = 50 V, Tch = 25°C (initial), L = 1.66 mH, RG = 25 Ω, IAR = 30 A Note 3: Repetitive rating: pulse width limited by maximum junction temperature.
Note 4:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (...