Document
2SK3177
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-745A (Z) 2nd. Edition February 1999 Features
• Low on-resistance R DS = 90 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source
Outline
TO–220FM
D
G
1 2 S
1. Gate 2. Drain 3. Source
3
2SK3177
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR I AP
Note3 Note3 Note2 Note1
Ratings 200 ±20 15 60 15 15 15 35 150 –55 to +150
Unit V V A A A A mJ W °C °C
EAR
Pch Tch
Tstg
1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω
Electrical Characteristics (Ta = 25°C)
Item Symbol Min 200 ±20 — — 1.0 — — 16 — — — — — — — — — Typ — — — — — 90 95 20 1600 510 250 20 120 400 170 0.85 100 Max — — ±10 10 2.5 115 125 — — — — — — — — — — Unit V V µA µA V mΩ mΩ S pF pF pF ns ns ns ns V ns I F = 15 A, VGS = 0 I F = 15 A, VGS = 0 diF/ dt = 50 A/ µs Test Conditions I D = 10 mA, VGS = 0 I G = ±100 µA, VDS = 0 VGS = ±16 V, VDS = 0 VDS = 200 V, VGS = 0 I D = 1 mA, VDS = 10 V I D = 8 A, VGS = 10 VNote4 I D = 8 A, VGS = 4 V Note4 I D = 8 A, VDS = 10 V Note4 VDS = 10 V VGS = 0 f = 1 MHz I D = 8 A, VGS = 10 V RL = 3.75 Ω Drain to source breakdown voltage V(BR)DSS Gate to source breakdown voltage V(BR)GSS Gate to source leak current Zero gate voltege drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body–drain diode forward voltage Body–drain diode reverse recovery time Note: 4. Pulse test I GSS I DSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr
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2SK3177
Main Characteristics
Power vs. Temperature Derating 40
100
Maximum Safe Operation Area
10
PW
DC Op era
Pch (W)
I D (A)
30 10 3 1
10
=1
tio
µs
30
0m
Tc
1m
s( 1s
0µ
s
t)
s
Channel Dissipation
Drain Current
20
n(
ho
C)
=2
10
Operation in 0.3 this area is 0.1 limited by R DS(on) 0.03 0.01 Ta = 25 °C 1 2 5 10 20
5°
0
50
100
150 Tc (°C)
200
50 100 200 500 V DS (V)
Case Temperature
Drain to Source Voltage
Typical Output Characteristics 50 Pulse Test 10 V 6V 4V 3.5 V 30 20
Typical Transfer Characteristics V DS = 10 V Pulse Test
I D (A)
ID Drain Current
(A)
3V
40
16
12
Drain Current
20
8 Tc = 75°C –25°C 25°C
10 VGS =2.5 V 0 2 4 6 Drain to Source Voltage 8 10 V DS (V)
4
0
1 2 3 Gate to Source Voltage
4 5 V GS (V)
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2SK3177
Drain to Source Saturation Voltage vs. Gate to Source Voltage Static Drain to Source on State Resistance vs. Drain Current 500 Pulse Test
Drain to Source Saturation Voltage V DS(on) (V)
Pulse Test
4
Drain to Source On State Resistance R DS(on) (mΩ )
5
200 VGS = 4 V 100 10 V 50
3
2 I D = 15 A 1 10 A 5A 0 12 4 8 Gate to Source Voltage 16 20 V GS (V)
20 10 1 2 50 10 20 5 Drain Current I D (A) 100
Static Drain to Source on State Resistance R DS(on) ( mΩ)
Forward Transfer Admittance |y fs | (S)
Static Drain to Source on State Resistance vs. Temperature 500 Pulse Test 400 5, 10 A 15 A 200 V GS = 4 V 5, 10 A 100 10 V 0 –40 0 40 80 120 160 Case Temperature Tc (°C) 15 A
Forward Transfer Admittance vs. Drain Current 50 25 °C 20 Tc = –25 °C 10 5 2 1 0.5 0.1 V DS = 10 V Pulse Test 0.3 1 3 10 30 Drain Current I D (A) 100 75 °C
300
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2SK3177
Body–Drain Diode Reverse Recovery Time 1000 10000 di / dt = 50 A / µs V GS = 0, Ta = 25°C 5000 Typical Capacitance vs. Drain to Source Voltage
Reverse Recovery Time trr (ns)
Capacitance C (pF)
500
2000 1000 500 200 100 50
Ciss
200 100 50
Coss Crss VGS = 0 f = 1 MHz 0 10 20 30 40 50
20 10 0.1
20 10 0.3 1 3 10 30 100 Reverse Drain Current I DR (A)
Drain to Source Voltage V DS (V)
Dynamic Input Characteristics
Switching Characteristics
V DS (V)
V GS (V)
200 V GS V DS V DD = 150 V 100 V 50 V
20
500 300
t d(off) tf
Switching Time t (ns)
160
16
100 30 10
Drain to Source Voltage
120
12
Gate to Source Voltage
tr t d(on)
80
I D = 15 A V DD = 150 V 100 V 50 V 40 80 120 160 Gate Charge Qg (nc)
8
40
4 0 200
3 1 0.1
V GS = 10 V, V DD = 30 V PW = 5 µs, duty < 1% 0.3 3 1 Drain Current 10 I D (A) 30 100
0
5
2SK3177
Reverse Drain Current vs. Source to Drain Voltage
Repetive Avalanche Energy E AR (mJ)
Maximun Avalanche Energy vs. Channel Temperature Derating 20 I AP = 15 A V DD = 50 V duty < 0.1 % Rg > 50 Ω
20
Reverse Drain Current I DR (A)
16 10 V 12
16
12
8
V GS = 0, –5 V 5V Pulse Test
8
4
4 0 25
0
0.4
0.8
1.2
1.6
2.0
50
75
100
125
150
Source to Drain Voltage
V SD (V)
Channel Temperature Tch (°C)
Avalanche Test Circuit
Avalanche Waveform VDSS VDSS – V DD
V DS Monitor
L I AP Monitor
EAR =
1 2 • L • I AP • 2
V (BR)DSS I AP VDD ID V DS
.